P-I-N Diodes for Low-Frequency High-Power Switching Applications

Caulton, M.; Rosen, A.; Stabile, Paul J.; Gombar, A.

doi:10.1109/tmtt.1982.1131163

Cited by 21 publications

(2 citation statements)

References 3 publications

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“…The significant dimensions used of the device structure are documented in Table 1. The channel doping is very low, which results in a configuration similar to a P-i-N diode [10]. The nominal back gate (VBG) and front gate (VFG) bias conditions used for calibration of the TCAD deck are -1.0V and 1.2V respectively.…”

Section: IImentioning

confidence: 99%

Simulation based DC and dynamic behaviour characterization of Z2FET

Adamu-Lema

Duan

Navaro

et al. 2017

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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This work presents a TCAD investigation of the operation of a Z2FET device for memory application, where the TCAD model is well calibrated to experimental hysteresis curves. The DC operation of the Z2FET has been analyzed for 4 cases, based on the permutations of the front and back gate biases, to identify and compare different modes of operation. The memory mode of operation is under the "Thyristor" like scenario with positive and negative biases applied to the front and back gates respectively. The dynamic property of Z2FET as a memory device is shown and its operation mechanism is described.

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Section: IImentioning

confidence: 99%

Simulation based DC and dynamic behaviour characterization of Z2FET

Adamu-Lema

Duan

Navaro

et al. 2017

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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“…Nowadays, PIN diode [4], as well as GaAs FET (Gallium arsenide field effect transistor) [5], has been widely used in RF switch. In this paper, a switch module for GSM application is designed with PIN diode, which is much cheaper and more widely used than GaAs FET.…”

Section: Introductionmentioning

confidence: 99%

An antenna switch module for GSM application using LTCC technology

Hong

Peng

Mao

2010

2010 International Conference on Microwave and Millimeter Wave Technology

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An antenna switch module using PIN (P region-I region-N region) diode for GSM (Global System for Mobile communications) application has been designed and fabricated. By taking advantage of three-dimensional integration of the LTCC (low-temperature co-fired ceramic) substrate and through a novel design of miniature lumped-element realization of transmission line, the size of proposed GSM switch is 7.64mm×4.20mm×0.67mm.The measured in-band isolation of the antenna switch module is better than-28 dB and IL (insertion loss) is less than -1.3dB, which are in good agreement with the simulated results. It also has the advantages of increased density, tight integration, and low cost.Index Terms-antenna switch module, lumped-element circuit, LTCC (low temperature co-fired ceramic), PIN diode.

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Microwave Switches

Bera¹

2018

Lecture Notes in Electrical Engineering

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P-I-N Diodes for Low-Frequency High-Power Switching Applications

Cited by 21 publications

References 3 publications

Simulation based DC and dynamic behaviour characterization of Z2FET

Simulation based DC and dynamic behaviour characterization of Z2FET

An antenna switch module for GSM application using LTCC technology

Microwave Switches

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