p-type behavior in Na-doped ZnO films and ZnO homojunction light-emitting diodes

Interaction between Na and Li in ZnO

“…Hence, there is a fierce and on-going effort worldwide-both by theoretical and experimental means-addressing the acceptor development in ZnO. 14 Based on theoretical predictions 15 and preliminary experimental data, 16 group-Ia elements, specifically, Li and Na, may potentially act as shallow acceptors when incorporated on Zn site-Li Zn and Na Zn . The results from Refs.…”

Composition Dependence on Structural and Optical Properties of MgxZn1-xO Thin Films Prepared by Sol-Gel Method

“…For the Mg x Zn 1-x O thin films, the residual stress was increased with increase in the Mg mole fraction due to the difference ionic radius and the lattice distortion. The bond length L of the Zn-O is given by (3) where the u parameter is given by (in the wurtzite structure) (4) and relates to a/c ratio. The bond length of the Zn-O in the Mg x Zn 1-x O thin films was decreased from 1.948 to 1.942 Å at the content ratio ranging from 0 to 0.2.…”

“…[1][2][3][4][5] In particular, its large exciton binding energy of 60 meV, 6 which is larger than the thermal energy at room temperature (RT), allows excitons to play important roles at RT and ensures efficient lasing even at RT. 7 In addition, its high thermal and chemical stability with the possibility of using the wet processing has led to ZnO-based oxide semiconductor as an alternative material to nitride semiconductors.…”

Realization of p-Type Conductivity in ZnO via Potassium Doping

“…The realization of p-type Ag-doped ZnO thin films has been reported [10,11]. In other previous studies [12][13][14], growth of p-type ZnO doped with Na was achieved using pulsed laser deposition method. Electroluminescence emission from ZnO based light emitting diodes with Na doping as the p-type layer was observed.…”