p‐type conduction in stacking‐fault‐free m ‐plane GaN

Abstract

Transport measurements of p‐type m ‐plane GaN films grown on low extended‐defect density, free‐standing m ‐plane (10$ \bar 1 $0) GaN substrates are presented. No significant anisotropy in in‐plane mobility was found for hole concentrations between 2.45 × 1017 and 8.7 × 1018 cm–3. Since faulted, heteroepitaxial m ‐plane films showed significant anisotropy in electron and hole mobility a microstructural feature with anisotropic distribution (basal plane stacking faults) is discussed as a possible source of anisotropic scattering in non‐polar and semi‐polar films. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Epitaxial lateral overgrowth of non-polar GaN(11̄00) on Si(112) patterned substrates by MOCVD

“…The growth of m-plane GaN has been reported on g-LiAlO 2 (1 0 0) [7,13], m-plane SiC [14], and bulk m-plane GaN substrates [15,16], all of which have limited availability or high cost. Silicon is a very attractive substrate for the growth of GaN due to its high quality, good thermal conductivity, low cost, availability in large sizes, and the ease with which Si can be selectively removed before packaging if needed.…”

Surface morphology, structural and optical properties of polar and non-polar ZnO thin films: A comparative study

“…As mentioned above, the optical absorption spectroscopy and PL measurement indicate that the defect concentration of m-ZnO is higher than that of c-ZnO, which is responsible for low electron mobility. On the other hand, McLaurin and Speck found significant anisotropy in electron and hole mobility of heteroepitaxial m-plane GaN films with anisotropic distribution of stacking faults [25]. Similarly, the large electron mobility difference between c-and m-ZnO can be related to anisotropic distribution of stacking faults in the m-ZnO.…”

Effect of Basal-plane Stacking Faults on X-ray Diffraction of Non-polar (1120) a-plane GaN Films Grown on (1102) r-plane Sapphire Substrates

“…Therefore, at low temperatures, BSFs exhibit characteristic luminescence features in the region of 3.42~3.44 eV, and this finding indicates an effective radiative recombination channel in non-polar GaN-based structures [13,14]. Moreover, BSFs have also been proposed as the origin of anisotropic electrical conductivity along in-plane orientations in non-polar GaN films [15][16][17]. Consequently, the BSFs can significantly affect structural, electrical, and optical properties of non-polar GaN-based optoelectronic and/or electronic devices.…”