p-type Conduction in ZnO Nanowire Schottky Field-effect Transistors with Pt Metal Electrodes

We have investigated the electrical and microstructural properties of Se Schottky contacts to n-type Si before and after rapid thermal annealing (RTA) at temperatures in the range of 100200°C for 30 s under N 2 ambient. The forward and reverse leakage currents increased with increasing RTA temperature following which the barrier heights decreased from 0.71 to 0.60 eV before and after annealing at 200°C. With increasing RTA temperature, the crystallization of the Se film proceeded and the film was fully crystallized after being annealed at 200°C without the reaction between Se film and Si substrate. The decrease in the barrier height of Se Schottky contacts to n-type Si with increasing RTA temperature could be associated with the decrease in series resistance caused by the phase transformation from high resistance amorphous Se to low resistance crystalline Se. An investigation of the reverse currentvoltage characteristics of Se/n-type Si Schottky contacts showed that the Schottky emission mechanism dominates the current transport in the reverse bias at all annealed temperatures in the range of 100200°C.

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p-type Conduction in ZnO Nanowire Schottky Field-effect Transistors with Pt Metal Electrodes

Cited by 7 publications

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Influence of annealing effects on the electrical and microstructural properties of Se Schottky contacts on n-type GaN

Influence of annealing effects on the electrical and microstructural properties of Se Schottky contacts on n-type GaN

Compact Modeling of the I-V Characteristics of ZnO Nanowires Including Nonlinear Series Resistance Effects

Effect of Rapid Thermal Annealing on the Electrical and Structural Properties of Se Schottky Contacts to n-Type Si

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