p -type electrical conduction in α-AgGaO2 delafossite thin films

Abstract

Thin films of delafossites of ␣-AgGaO 2 were prepared on ␣-Al 2 O 3 ͑0001͒ and on Si ͑100͒ single crystal substrates by pulsed laser deposition. The films have a band gap of 4.12 eV and a transparency of more than 50% in the visible region. The electrical conductivity at 300 K was 3.2ϫ 10 −4 S cm −1 . The positive sign of Seebeck coefficient ͑+70 V K −1 ͒ demonstrated the p-type conduction in the films. Transparent p-n heterojunctions on a glass substrate having a structure glass/ITO/ n-ZnO / p-AgGaO 2 were fabricated. The ratio of forward to reverse current was more than 100 in the range of −2 to + 2 V.

Electronic transition and electrical transport properties of delafossite CuCr1−xMgxO2 (0 ≤ x ≤ 12%) films prepared by the sol-gel method: A composition dependence study

“…The crossover was previously observed in other delafossite films, such as CuAlO 2 , 8 CuGaO 2 , 20 and AgGaO 2 . 43 In lower temperature region, the thermal energy weakening may depress the hole hopping between the nearest-neighbor Cu sites, and the contribution of Cr site hopping becomes more dominant. Hence, the hopping to the Cu site in other Cu layers becomes relatively dominant.…”

Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures

“…10 Recently we have reported ZnO based alltransparent conducting p-n heterojunction diodes with p-type AgCoO 2 . 11,12 Although ZnO films can be grown by a variety of methods, including radiofrequency (RF) and direct-current (DC) sputtering, 3,13,14 chemical vapor deposition, 15 spray pyrolysis, 16 and electron cyclotron resonance-assisted molecular-beam epitaxy, 17 we used pulsed laser deposition (PLD) 1,18,19 to deposit high-quality ZnO films because of its effectiveness and amenability to different growth conditions. 20 For the present study we fabricated heterojunctions of n-type ZnO on p-type Si, which has many advantages such as low cost, large wafer size, and the possibility of integrating oxide semiconductors with already highly matured silicon technology.…”

Transport properties and lithium insertion study in the p-type semi-conductors AgCuO2 and AgCu0.5Mn0.5O2

“…Indeed, while delafossite AgMO 2 (M ¼ Al, Sc, Ga, In) member of this series ranges from white to bright orange in color depending on the trivalent cation [11], AgCu 0.5 Mn 0.5 O 2 powder is dark-brown. This B-site modification did not greatly impact the electronic conductivity in comparison with the other AgMO 2 delafossite [11,[37][38][39][40], reflecting a carrier (hole) trapping effect within the octahedral layers and low mobility, as evidenced the low value determined for m ¼ 1.18 Â 10 À7 cm 2 /(V s) at 298 K.…”