p-Type ZnO:N obtained by ion implantation of nitrogen with post-implantation annealing in oxygen radicals

Investigation of p-type behavior in Ag-doped ZnO thin films by E-beam evaporation

“…However, it has been proved difficult to fabricate reproducible p-type ZnO of sufficient high quality owing to the fact that ZnO is intrinsically an n-type semiconductor material attributed by native donor defects such as oxygen vacancy (V o ) or interstitial zinc (Zn i ) and/or unintentionally doped hydrogen [2][3][4][5][6]. Recently, several research groups have achieved p-type conduction in the ZnO films using various elements as ptype dopants such as group I (Li, Na and K) [7][8][9], V (N, P, Sb and As) [10][11][12][13][14][15], and IB (Cu and Ag) [16][17][18][19]. Group-I elements have small size, tend to occupy interstitial sites rather than substitutional sites, thereby serve mainly as donors.…”

Annealing Effect on the Luminescent Properties and Native Defects of ZnO

“…In 2001, Joseph et al [6] revealed room-temperature p -type conduction in nitrogen-doped ZnO films. The results obtained subsequently with various acceptors (As, N, P, Cu, Ag) [7][8][9] demonstrate that only nitrogen doping may ensure hole conduction in ZnO, but the resistivity of the resulting material is not low enough for optoelectronic applications. The point is that, at high growth or annealing temperatures, acceptor dopants are compensated by Zn i and V O native donors related to the presence of excess zinc.…”

Effects of Nitrogen Irradiation on Photoluminescence around 1.54 μm from Er-containing ZnO

“…It has been reported 8) that, according to the XAFS results, the optically active Er in ZnO (ErO 6 ) was at the center of an oxygen octahedron with unequal edge lengths, while showing the C 4v symmetry. Also, there have been many reports [16][17][18][19] on the N-doping into ZnO to explore the p-type conductivity. At this moment, it is however difficult to distinguish a N-doping effect from synergistic oxygen effects, since, in those reports, the N-doped ZnO specimens were also annealed in air or oxygen atmosphere at high temperatures.…”