P(VDF-TrFE-CFE) terpolymer thin-film for high performance nonvolatile memory

Chen, Xin; Liu, Lu; Liu, Shi-Zheng; Cui, Yushuang; Chen, Xiang‐Zhong; Ge, Haixiong; Shen, Qun

doi:10.1063/1.4791598

Cited by 31 publications

(19 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A straightforward strategy is to explore solution‐processed dielectric materials with high‐k values for the development of highly efficient AC‐driven organic EL devices driven by low voltage. Chen et al and Zhang et al used a relaxor ferroelectric polymer P(VDF‐TrFE‐CFE) with high‐k index as the dielectric layer to fabricate the AC‐LEDs, as shown in Figure a . The operation principle was proposed as follows: the holes are generated in the HGL of Poly‐TPD: F4TCNQ and they move toward to the interface between the EML and TmPyPB in the negative half of the AC cycle, the electrons are simultaneously injected into EML from LiF/Al electrode through TmPyPB ETL.…”

Section: Optimizing Strategies For Ac‐driven El Devicesmentioning

confidence: 99%

Advances in Alternating Current Electroluminescent Devices

Wang

Lian

et al. 2019

Advanced Optical Materials

116

View full text Add to dashboard Cite

radiatively at the active emissive layer driven by constant-voltage or direct current (DC). However, the DC-driven mode for OLEDs and QLEDs limits their practical applications. One reason is that the unidirectional DC flow may lead to unfavorable charges accumulation at high current density. Furthermore, the power losses are unavoidable as the DC-driven devices require power converters and rectifiers when connected to the 110/220 V at 50/60 Hz alternating current (AC) power sources. OLEDs are also particularly sensitive to dimensional variations accompanied by the generation of leakage currents at such imperfections, which is unfavorable for their application in flexible electronics. Consequently, AC-driven EL devices have attracted attention as promising alternatives to DC-driven EL devices for a variety of applications. [25][26][27][28][29][30][31][32][33] AC-driven EL devices are primarily composed of electrodes, an emissive layer and a single-or multilayer of insulating dielectric without the critical requirement for energy band matching, which facilitates their application in large-scale displays and flexible devices. [34] The device structure of AC-driven EL devices can be mainly divided into three kinds: i) AC-driven thin film electroluminescent (AC-TFEL) devices; ii) AC-driven lightemitting devices (AC-LEDs), and iii) AC-driven light-emitting field effect diodes (AC-LEFETs). Under the AC electric field, light generation is based on either the hot-electron impact excitation mechanism or the exciton recombination mechanism, depending on the device configuration. Despite the different operation principles, AC-driven EL devices have shown specific Alternating current (AC)-driven electroluminescent (EL) devices have recently attracted attention as potential alternatives to direct current (DC)-driven organic light-emitting diodes (OLEDs), as they have the great advantage of easy integration into the AC power system of 110/220 V at 50/60 Hz without complicated back-end electronics. However, the high driving voltage and low power efficiency inherent to AC-driven EL devices limit their widespread application. While researchers have made some remarkable progress in this field, the underlying causes during the development process remain to be explored. The strategies for improving the performance of AC-driven EL devices with different configurations, such as the conventional sandwiched structure and multilayer-based light-emitting devices, are summarized in this review. For example, it is crucial to enhance the effective electric field around the emitters for AC-driven thin film electroluminescent (AC-TFEL) devices, while the unbalanced generation/injection of charge carriers is the main limiting factor for the performance of AC-driven light-emitting devices (AC-LEDs). The recent advances in AC-driven EL devices, with some new configurations or new-type emitting materials, are presented by category. The challenges and opportunities for the further development of AC-driven EL devices are also discussed.

show abstract

Section: Optimizing Strategies For Ac‐driven El Devicesmentioning

confidence: 99%

Advances in Alternating Current Electroluminescent Devices

Wang

Lian

et al. 2019

Advanced Optical Materials

116

View full text Add to dashboard Cite

show abstract

“…This interest stems from a set of attractive characteristics, such as fl exibility, ease of processing, cost-effectiveness, and environmentally friendly nature. [9][10][11][12] In particular, poly(vinylidenefl uoride-trifl uoroethylene-chlorotrifl uoroethylene) (P(VDF-TrFE-CTFE)) is considered to be one of the promising materials as it has a higher polarization, which is one Figure 1 describes two different annealing processes in order to crystallize a P(VDF-TrFE-CTFE) polymer fi lm. [1][2][3][4][5][6][7][8] In recent years, polyvinylidenefl uoride (PVDF)-based polymers have elicited much attention because of the potential technological benefi ts including large spontaneous polarization and excellent polarization stability.…”

Section: Doi: 101002/aelm201600225mentioning

confidence: 99%

“…In recent years, polyvinylidenefluoride (PVDF)‐based polymers have elicited much attention because of the potential technological benefits including large spontaneous polarization and excellent polarization stability . Among the various PVDF‐based polymers, the class of terpolymers have shown significantly improved inherent dielectric constant (κ) and electromechanical properties, which are necessary requirements for electronic and energy applications . In particular, poly(vinylidenefluoride‐trifluoroethylene‐chlorotrifluoroethylene) (P(VDF‐TrFE‐CTFE)) is considered to be one of the promising materials as it has a higher polarization, which is one of the most important characteristics of a ferroelectric polymer.…”

mentioning

confidence: 99%

Enhanced Ferroelectric Property of P(VDF‐TrFE‐CTFE) Film Using Room‐Temperature Crystallization for High‐Performance Ferroelectric Device Applications

Cho

Ahn

Park

et al. 2016

Adv Elect Materials

View full text Add to dashboard Cite

The ferroelectric β‐phase in a poly(vinylidenefluoride‐trifluoroethylene‐chlorotrifluoroethylene) film is successfully formed using a room temperature solvent‐annealing process and shows enhanced ferroelectricity compared to a thermally annealed film. Applications in electronics and energy are demonstrated with significantly enhanced device performances for a solvent annealing (SA) film employed devices compared to a thermal annealing film employed due to enhanced ferroelectricity of the SA film.

show abstract

“…In organic thin film transistors (OTFT), relaxor-ferroelectric terpolymers are suitable for high-k gate materials 13 . Thin films of P(VDF-TrFE-CFE) terpolymers have been used as nonvolatile memory devices with a low-voltage operation of 1 V for integrated drive electronics 14 .…”

Section: Introductionmentioning

confidence: 99%

Re-evaluation of the origin of relaxor ferroelectricity in vinylidene fluoride terpolymers: An approach using switching current measurements

Tsutsumi

Okumachi

Kinashi

et al. 2017

Sci Rep

View full text Add to dashboard Cite

Relaxor-ferroelectric vinylidene fluoride (VDF)-based terpolymers have attracted increased attention for industrial applications because of their large dielectric constants, low voltage operation for nonvolatile memory, and energy storage capabilities. However, the origin of the relaxor ferroelectricity of VDF-based terpolymers is still under investigation. Here, we investigate the ferroelectric behaviour of thin films of terpolymers of VDF, trifluoroethylene (TrFE), and chlorofluoroethylene (CFE) (P(VDF-TrFE-CFE)) and terpolymers of VDF, TrFE, and chlorotrifluoroethylene (CTFE) (P(VDF-TrFE-CTFE)) using switching current – electric field (I-E) loop measurements. I-E loop measurements have substantial advantages because they directly provide information regarding the independent switching behaviour of dipoles. We show that the I-E loops of P(VDF-TrFE-CFE) are the summation of three pairs of Gaussian peak functions. Moreover, we provide definite proof of the presence of double hysteresis loop-like antiferroelectric behaviour and relaxor-ferroelectricity in the nanodomains of the dipoles when applying positive or negative sinusoidal electric fields to the sample films.

show abstract

P(VDF-TrFE-CFE) terpolymer thin-film for high performance nonvolatile memory

Cited by 31 publications

References 27 publications

Advances in Alternating Current Electroluminescent Devices

Advances in Alternating Current Electroluminescent Devices

Enhanced Ferroelectric Property of P(VDF‐TrFE‐CTFE) Film Using Room‐Temperature Crystallization for High‐Performance Ferroelectric Device Applications

Re-evaluation of the origin of relaxor ferroelectricity in vinylidene fluoride terpolymers: An approach using switching current measurements

Contact Info

Product

Resources

About