Packaging Innovations for High Voltage (HV) GaN Technology

Mishra, Dibyajat; Arora, Vijay K.; Nguyen, Luu; Iriguchi, S.; Sada, H.; Clemente, L.; Lim, Sung Kyu; Lin, HY; Lohia, Alok; Gurrum, Siva P.; Sauser, J.; Spencer, Susan D.

doi:10.1109/ectc.2017.322

Cited by 8 publications

(3 citation statements)

References 5 publications

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“…For high-voltage, the Discretes Flat No-leads (DFN) package is used by several manufacturers for an achievable high-voltage (up to 1200 V) that exhibits few stray inductances. For integrated GaN technology, the Quad Flat No-Lead (QFN) package is preferred, with some improvement as described in [34]. The growth of GaN devices in the semiconductor market goes hand in hand with the development of packages that can exploit the advantage of the switching characteristics of HEMT transistors, featuring a compact size to reduce parasitic inductance and the isolation strength capability to achieve the high-voltage switches that are increasingly demanded.…”

Section: Package Solutionsmentioning

confidence: 99%

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci

Barba

2023

Energies

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High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride technology in DC-DC and DC-AC converters is carried out, considering the improvements and the issues expected for the higher switching transient speed achievable.

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Section: Package Solutionsmentioning

confidence: 99%

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci

Barba

2023

Energies

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“…A single Quad Flat No-Lead (QFN) novel package solution is developed for the integration of a GaN FET and its driver with superior product manufacturability and performance. 162 The literature highlights the design of a PCB inductor with flexible ferrite sheet in view of optimizing the inductor volume. It also considers the thermal issues along with the inductor stray capacitances.…”

Section: Pcb Layout/designmentioning

confidence: 99%

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Yadlapalli

Anuradha²,

Kandipati³

et al. 2021

Int J Energy Res

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The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role in various applications such as adapters, uninterrupted power supplies, smart grids, and electric vehicles (EVs). They have the phenomenal properties such as high critical breakdown field, WBG, and high-saturated drift velocity as compared to the silicon (Si). This article throws a light on the classification and recent advancements of the GaN-based power devices along with their structural features. Moreover, it explores the critical issues that degrade the device performance and also various methods to improve their performance. The recently developed commercial GaN devices are enumerated with their figure of merits (FOMs) comparison with the Si and SiC devices. The outrageous features of GaN devices are well utilized for realizing the high power density and high efficiency power converters in case of EV applications. The updated survey of various GaN devices-based ac-dc, dc-dc, and dc-ac converters is presented along with their salient features. This article also emphasizes the approaches for resolving the power module issues such as parasitics, layout, and thermal design other than the power converters. This review is ultimately helpful for the design engineers to abridge the technical gaps arising due to the power electronics barriers.

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“…ith the widespread commercialization of trench-based power devices such as trench field plate power Metal Oxide Semiconductor Field Effect Transistor (MOSFET), trench super junction MOSFET, trench field-stop Insulated Gate Bipolar Transistor (IGBT) and trench MOS barrier Schottky (TMBS) to minimize on-state power consumption, reliability weaknesses such as High Temperature Reverse Bias (HTRB) and Temperature Humidity Bias (THB) are starting to surface as potential threat to hamper future technology development efforts, especially in the area of device scaling, edge termination design as well as the use of smaller, thinner and greener packages [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

High Temperature Reverse Bias (HTRB) & Temperature Humidity Bias (THB) Reliability Failure Mechanisms and Improvements in Trench Power MOSFET and IGBT

Ooi

Goh

Ngwan

2021

IEEE J. Electron Devices Soc.

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Packaging Innovations for High Voltage (HV) GaN Technology

Cited by 8 publications

References 5 publications

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

High Temperature Reverse Bias (HTRB) & Temperature Humidity Bias (THB) Reliability Failure Mechanisms and Improvements in Trench Power MOSFET and IGBT

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