Palladium-Coated and Bare Copper Wire Study for Ultra-Fine Pitch Wire Bonding

Lim, Adeline B.Y.; Chang, Andrew; Lee, Chee Xian; Yauw, Oranna; Chylak, Bob; Chen, Zhong

doi:10.1149/05201.0717ecst

Cited by 11 publications

(4 citation statements)

References 8 publications

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“…Murali et al [ 114 ] added element of corrosion resistance to Cu to prepare a new alloyed Cu wire, which has homogeneous FAB formation and similar first and second bond bondability to bare Cu wire, and exhibits better electrochemical corrosion resistance and slower interfacial diffusion than that of bare Cu wire as well as higher bonding reliability than that of Au wire after HTST at 175 °C for 2000 h. Krimori et al revealed that Cu bonding wire with oxidation-resistant metal coating Pd presents good bondability and reliability, sufficient to replace Au bonding wire ( Table 2 ) as well as having much lower production cost than that of Au bonding wire [ 115 , 116 ]. In addition, electronic flame off (EFO) current has a strong influence on Pd distribution in the FAB [ 117 ], which has an effect on Cu–Al IMCs growth and thus affects bond strength and reliability [ 111 ]. Other literature also reported that the PCC wire improves bonding reliability under high temperature and high humidity and stressed environment due to the adjustment of controls for Cu-Al interdiffusion and specific IMCs formation [ 66 , 118 , 119 ].…”

Section: Cu Bonding Wirementioning

confidence: 99%

Research Progress on Bonding Wire for Microelectronic Packaging

et al. 2023

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Wire bonding is still the most popular chip interconnect technology in microelectronic packaging and will not be replaced by other interconnect methods for a long time in the future. Au bonding wire has been a mainstream semiconductor packaging material for many decades due to its unique chemical stability, reliable manufacturing, and operation properties. However, the drastic increasing price of Au bonding wire has motivated the industry to search for alternate bonding materials for use in microelectronic packaging such as Cu and Ag bonding wires. The main benefits of using Cu bonding wire over Au bonding wire are lower material cost, higher electrical and thermal conductivity that enables smaller diameter Cu bonding wire to carry identical current as an Au bonding wire without overheating, and lower reaction rates between Cu and Al that serve to improve the reliability performance in long periods of high temperature storage conditions. However, the high hardness, easy oxidation, and complex bonding process of Cu bonding wire make it not the best alternative for Au bonding wire. Therefore, Ag bonding wire as a new alternative with potential application comes to the packaging market; it has higher thermal conductivity and lower electric resistivity in comparison with Cu bonding wire, which makes it a good candidate for power electronics, and higher elastic modulus and hardness than Au bonding wire, but lower than Cu bonding wire, which makes it easier to bond. This paper begins with a brief introduction about the developing history of bonding wires. Next, manufacturability and reliability of Au, Cu, and Ag bonding wires are introduced. Furthermore, general comparisons on basic performance and applications between the three types of bonding wires are discussed. In the end, developing trends of bonding wire are provided. Hopefully, this review can be regarded as a useful complement to other reviews on wire bonding technology and applications.

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Section: Cu Bonding Wirementioning

confidence: 99%

Research Progress on Bonding Wire for Microelectronic Packaging

et al. 2023

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“…The study found that different EFO discharge current settings lead to full or partial coverage of Pd on FAB and will also directly affect the distribution of Pd at the bonding interface. Lim et al [ 39 , 40 ] used 0.6 mil PdCu wires to conduct experiments under low, medium, and high EFO discharge current settings. Then, a FEI dual beam focused ion beam (FIB) system was used to analyze the cross-section of FAB samples.…”

Section: The Distribution Of Pd In Fab and Bonding Interfacementioning

confidence: 99%

Research Progress of Palladium-Plated Copper Bonding Wire in Microelectronic Packaging

Zhang,

Guo,

Cao

et al. 2023

Micromachines

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Wire-bonding technology is the most commonly used chip interconnection technology in microelectronic packaging. Metal bonding wire is the key material for wire bonding and plays an important role in the reliability of electronic devices. In recent years, palladium-plated copper (PdCu) bonding wire has been widely used because of its low cost, good electrical and thermal conductivity, the fact that it is not easy to oxidize, and its high reliability. Therefore, it is necessary to review its research progress. In this paper, the preparation and application of palladium-plated copper bonding wire are reviewed. Firstly, the preparation methods of electroplating, electroless plating, and direct plating are introduced. Secondly, the factors affecting the distribution of Pd in free air balls and bonding interfaces, the effect of Pd on the formation and growth of intermetallic compounds in PdCu wire, stitch bond, and reliability of PdCu wire are summarized and analyzed in the application process. Finally, its development prospect is prospected. Hopefully, this review can help readers to have a comprehensive understanding of the preparation and application of palladium-plated copper bonding wires, and can accelerate the promotion of its application in more fields in the future.

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“…A.B.Y. Lim et al [ 45 ] compared the formation of a FAB and differences in wire bonding between PCC and bare Cu wire, as shown in Figure 3 . It was observed that under varying gas types and EFO currents, PCC wire exhibited the formation of irregular solder balls.…”

Section: Fab Morphologymentioning

confidence: 99%

Copper Wire Bonding: A Review

et al. 2023

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This paper provides a comprehensive review on copper (Cu) wire bonding. Firstly, it introduces the common types of Cu wire available in the market, including bare Cu wire, coated Cu wire, insulated Cu wire, and alloyed Cu wire. For each type, their characteristics and application areas are discussed. Additionally, we provide detailed insights into the impact of Free Air Ball (FAB) morphology on bonding reliability, including its effect on bond strength and formation mechanisms. Next, the reliability of Cu wire bonding is analyzed, with a focus on the impact of intermetallic compounds and corrosion on bonding reliability. Specifically, the formation, growth, and stability of intermetallic compounds at bonding interfaces are discussed, and their effects on bonding strength and reliability are evaluated. The detrimental mechanisms of corrosion on Cu wire bonding and corrosion inhibition methods are also analyzed. Subsequently, the applications of simulation in Cu wire bonding are presented, including finite element analysis and molecular dynamics simulations, which provide important tools for a deeper understanding of the bonding process and failure mechanisms. Finally, the current development status of Cu wire bonding is summarized, and future research directions are discussed.

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Palladium-Coated and Bare Copper Wire Study for Ultra-Fine Pitch Wire Bonding

Cited by 11 publications

References 8 publications

Research Progress on Bonding Wire for Microelectronic Packaging

Research Progress on Bonding Wire for Microelectronic Packaging

Research Progress of Palladium-Plated Copper Bonding Wire in Microelectronic Packaging

Copper Wire Bonding: A Review

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