Parallel angle resolved XPS investigations on 12in. wafers for the study of W and WSix oxidation in air

Pelissier, B.; Beaurain, A.; Barnes, Jean‐Paul; Gassilloud, R.; Martín, F.; Joubert, O.

doi:10.1016/j.mee.2008.06.012

Cited by 30 publications

(16 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…6 The XPS system is equipped with a high resolution monochromatic Al K a x-ray source (1486.6 eV photons) and a detector allowing a maximum resolution of 0.47 eV. 6 The XPS system is equipped with a high resolution monochromatic Al K a x-ray source (1486.6 eV photons) and a detector allowing a maximum resolution of 0.47 eV.…”

Section: Methodsmentioning

confidence: 99%

Patterning of silicon nitride for CMOS gate spacer technology. I. Mechanisms involved in the silicon consumption in CH3F/O2/He high density plasmas

Blanc¹,

Leverd²,

David³

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

show abstract

Section: Methodsmentioning

confidence: 99%

Patterning of silicon nitride for CMOS gate spacer technology. I. Mechanisms involved in the silicon consumption in CH3F/O2/He high density plasmas

Blanc¹,

Leverd²,

David³

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

show abstract

“…Twelve angles were acquired simultaneously between 21.88 • and 78.13 • relative to the substrate normal, giving access to (i) the average chemical surface information and (ii) an accurate depth resolved information with selected angle. 16 The relative atomic concentrations of Ge, Sb and Te were extracted from the Ge 3d, Sb 4d and Te 4d core level energy regions respectively. The binding energy scale was calibrated based on C 1s from graphite-like contamination at 284.7 eV.…”

Section: Methodsmentioning

confidence: 99%

Impact of Oxidation on Ge₂Sb₂Te₅and GeTe Phase-Change Properties

Gourvest¹,

Pelissier²,

Vallée³

et al. 2012

J. Electrochem. Soc.

Self Cite

View full text Add to dashboard Cite

Effects of Ge 2 Sb 2 Te 5 and GeTe oxidation on their phase-change properties were studied by optical measurements and Parallel Angle Resolved X-ray Photoelectron Spectroscopy (PARXPS). The influence of oxygen on the active material was depicted in order to explain variations of the phase-change properties. The surface analysis evidenced a two-steps oxidation involving the formation of germanium and antimony oxides then tellurium oxide. A smooth surface sputtering allowed physically distinguishing the different oxides on GeTe sample overlayer and gave information about oxidation mechanisms. A significant drift of crystallization temperatures and activation energies were observed after 12 months air exposure time that points out the influence of the phase-change materials oxidation on their active properties.

show abstract

“…5 uses the relative sensitivity to each chemical component with regards to the detection angle, which allows sorting the components as a function of depth. Thanks to the high numbers of angles acquired, the significance of the depth information is improved [13]. In the same way than with ToF-SIMS, we observe a phase evolution (due to the vertical stacking of heterogeneous layers) with depth in AR-XPS.…”

Section: Remaining Amount Of Etch Stop Layermentioning

confidence: 58%

Advanced backside sample preparation for multi-technique surface analysis

Veillerot

Fabbri

et al. 2011

Eur. Phys. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Backside sample preparation is a well known method to help circumvent undesired effects and artifacts in the analysis of a sample or device structure. However it remains challenging in the case of thin layers analysis since only a fraction of the original sample must remain while removing most or all of the substrate and maintaining a smooth and flat surface suitable for analysis. Here we present a method adapted to the preparation of ultra thin layers grown on pure Si substrates. It consists in a mechanical polishing up to a few remaining microns, followed by a dedicated wet etch. This method can be operated in a routine fashion and yields an extremely flat and smooth surface, without any remaining Si from substrate. It therefore allows precise analysis of the layers of interests with various characterization techniques.

show abstract

Parallel angle resolved XPS investigations on 12in. wafers for the study of W and WSix oxidation in air

Cited by 30 publications

References 21 publications

Patterning of silicon nitride for CMOS gate spacer technology. I. Mechanisms involved in the silicon consumption in CH3F/O2/He high density plasmas

Patterning of silicon nitride for CMOS gate spacer technology. I. Mechanisms involved in the silicon consumption in CH3F/O2/He high density plasmas

Impact of Oxidation on Ge₂Sb₂Te₅and GeTe Phase-Change Properties

Advanced backside sample preparation for multi-technique surface analysis

Contact Info

Product

Resources

About

Parallel angle resolved XPS investigations on 12in. wafers for the study of W and WSix oxidation in air

Cited by 30 publications

References 21 publications

Patterning of silicon nitride for CMOS gate spacer technology. I. Mechanisms involved in the silicon consumption in CH3F/O2/He high density plasmas

Patterning of silicon nitride for CMOS gate spacer technology. I. Mechanisms involved in the silicon consumption in CH3F/O2/He high density plasmas

Impact of Oxidation on Ge2Sb2Te5and GeTe Phase-Change Properties

Advanced backside sample preparation for multi-technique surface analysis

Contact Info

Product

Resources

About

Impact of Oxidation on Ge₂Sb₂Te₅and GeTe Phase-Change Properties