Paralleled SiC MOSFETs DC Circuit Breaker with SiC MPS Diode as Avalanche Voltage Clamping

Takamori, Taro; Wãda, Keiji; Saito, Wataru; Nishizawa, Satoshi

doi:10.1109/apec43599.2022.9773380

Cited by 7 publications

(2 citation statements)

References 17 publications

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“…During this state, the power devices incur conduction losses because of the on-resistance. Therefore, in solid-state circuit breakers, many power devices should be connected in parallel to share the current to reduce the conduction loss [15], [16].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, the clamping component use of a single chip contributes to excellent implementation, playing a significant role in the miniaturization of solid-state circuit breakers. The previous paper [16] focused on the application of the diode clamping method to address current imbalance issues. It lacked discussion on component design, circuit implementation, and clamp performance issues.…”

Section: Introductionmentioning

confidence: 99%

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Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping

Takamori,

Wada,

Saito

et al. 2024

IEEE Open J. Power Electron.

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This paper proposes a solid-state circuit breaker comprising silicon carbide (SiC) MOSFETs and a SiC diode, based on the principle of avalanche voltage clamping. The key challenge in realizing a solid-state circuit breaker lies in reducing conduction loss. A parallel connection of power semiconductor devices is the suitable configuration that can meet these requirements. However, in such a configuration, the current balance during cutoff operation may be affected by the variation in the breakdown voltage characteristics of the power semiconductor devices. To address this issue, the proposed circuit breaker employs clamping with a SiC merged pin-Schottky (MPS) diode, with high avalanche tolerance and robust characteristics under repetitive avalanche events. The effectiveness of the proposed solid-state circuit breaker is validated through experiments conducted in an unclamped inductive switching (UIS) test circuit using a 400-V, 50-A DC distribution system. Eventually, the demonstrations indicate that the SiC diode clamping method contributes to more compact implementations for solid-state circuit breakers.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%