Parameter extraction of HgCdTe infrared photodiodes exhibiting Auger suppression

Abstract

In this work, finite element methods are used to obtain self-consistent, steady-state solutions of Poisson's equation and the carrier continuity equations. Experimental dark current-voltage characteristics between 120 and 300 K of HgCdTe Auger-suppressed photodiodes with cutoff wavelength of λ c = 10 µm at 120 K are fitted using numerical simulations. Fitting parameters used include the overlap integral |F 1 F 2 | found to vary from 0.29 at 120 K down to 0.20 at 300 K and the Shockley-Read-Hall (SRH) characteristic lifetime found to be of the order of 10 −7 s at all temperatures. Based on this fitting, negative differential resistance observed in the experimental data is attributed to full suppression of Auger-1 processes and partial suppression of Auger-7 processes. Leakage current induced by traps and impurities in the material causing SRH recombination is found to limit the saturation current after Auger suppression.

Design and Modeling of HgCdTe nBn Detectors

“…The one-dimensional (1-D) model incorporates electrical and optical material properties of HgCdTe from previously published models, [13][14][15][16] and Auger, Shockley-Read-Hall, and radiative generation-recombination mechanisms were included in the steady-state drift-diffusion model at all locations within the device. Specific equations and parameters used to calculate carrier lifetimes and recombination rates are detailed in the authors' previous work.…”

“…The F 1 F 2 parameter did not affect the dark current density significantly, and the final value was selected based on that obtained in a past fitting study. 15 Table I lists the specific simulation parameters used for both LWIR nBn and DLPH structures.…”

Dense Array Effects in SWIR HgCdTe Photodetecting Arrays

“…This effect is therefore distinguishable from Auger suppression in long-and mid-wave IR MCT, with a characteristic onset when reverse bias sufficiently depletes the absorber to suppress the local Auger recombination rates. [24][25][26] Figure 11 shows volumeaverage net Auger recombination rates at 300 K for the dense arrays and single diodes. Like the net radiative recombination rates in Fig.…”

Modeling and Simulation of High Operating Temperature MWIR Photo Detector Based on Mercury Cadmium Telluride

“…Steady-state numerical simulations of HgCdTe Auger-suppressed infrared photodiodes by using a Sentaurus Device, a commercial software package by Synopsis, were reported by Emilie et al [6][7][8]. In this paper, a comprehensive model of device was designed and simulated using ATLAS device software from SILVACO® for electrical characterization of the non-equilibrium MCT photo detectors.…”