Parameter-free, predictive modeling of single event upsets due to protons, neutrons, and pions in terrestrial cosmic rays

Srinivasan, G. R.; Tang, He; Murley, P. C.

doi:10.1109/23.340543

Cited by 44 publications

(16 citation statements)

References 19 publications

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“…This method has been successfully used in previous works, as shown in Refs. [12,13]. In the present work, we considerably improve this approach by a series of developments that make it capable of fast and intensive simulation of full circuits with an accuracy degree similar to that of the TCAD simulation.…”

Section: Introductionmentioning

confidence: 99%

Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits

Autran¹,

Munteanu²,

Moindjie³

et al. 2016

Modeling and Simulation in Engineering Sciences

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This chapter describes a new computational approach for accurately modeling radiation-induced single-event transient current and charge collection at circuit level. This approach, called random-walk drift-diffusion (RWDD), is a fast Monte Carlo particle method based on a random-walk process that takes into account both diffusion and drift of carriers in a non-constant electric field both in space and time. After introducing the physical insights of the RWDD model, the chapter details the practical implementation of the method using an object-oriented programming language and its parallelization on graphical processing units. Besides, the capability of the approach to treat multiple node charge collection is presented. The chapter also details the coupling of the model either with an internal routine or with SPICE for circuit solving. Finally, the proposed approach is illustrated at device and circuit level, considering four different test vehicles in 65 nm technologies: a stand-alone transistor, a CMOS inverter, a SRAM cell and a flip-flop circuit. RWDD results are compared with data obtained from a full three-dimensional (3D) numerical approach (TCAD simulations) at transistor level. The importance of the circuit feedback on the charge-collection process is also demonstrated for devices connected to other circuit nodes.

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Section: Introductionmentioning

confidence: 99%

Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits

Autran¹,

Munteanu²,

Moindjie³

et al. 2016

Modeling and Simulation in Engineering Sciences

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show abstract

“…Fig. 3 shows the results of NUSPA calculation [25], as the effective cross section for spallation nuclei production in an inelastic scattering event for an incident proton energies of 50, 100, 150 MeV. It is striking that the production of relatively high-Z fragments which in turn, determined by SRIM, will yield electron-hole plasmas with highest density will be relatively independent of the primary nucleon energy.…”

Section: Initial Charge Deposition By Atmospheric Neutronsmentioning

confidence: 94%

Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation

Soelkner

2016

Microelectronics Reliability

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“…The modeling part should provide a model that calculates the SER for the conditions in which measured data is not available. Physical models capturing the underlying mechanisms leading to SEUs are especially useful because they allow the results to be extrapolated to future technologies [65], [66], [67], [68], [69], [70]. Fig.…”

Section: Methodsmentioning

confidence: 99%

Characterization of soft errors caused by single event upsets in CMOS processes

Karnik

Hazucha

2004

IEEE Trans.Dependable and Secure Comput.

447

211

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Abstract-Radiation-induced single event upsets (SEUs) pose a major challenge for the design of memories and logic circuits in highperformance microprocessors in technologies beyond 90nm. Historically, we have considered power-performance-area trade offs. There is a need to include the soft error rate (SER) as another design parameter. In this paper, we present radiation particle interactions with silicon, charge collection effects, soft errors, and their effect on VLSI circuits. We also discuss the impact of SEUs on system reliability. We describe an accelerated measurement of SERs using a high-intensity neutron beam, the characterization of SERs in sequential logic cells, and technology scaling trends. Finally, some directions for future research are given.

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Parameter-free, predictive modeling of single event upsets due to protons, neutrons, and pions in terrestrial cosmic rays

Cited by 44 publications

References 19 publications

Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits

Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits

Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation

Characterization of soft errors caused by single event upsets in CMOS processes

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