Parameter Identification for Nonlinear Circuit Models of Power BAW Resonator

Abstract

The large signal operation of the bulk acoustic wave (BAW) resonators is characterized by the amplitude-frequency effect and the intermodulation effect. The measurement of these effects, together with that of the small signal frequency characteristic, are used in this paper for the parameter identification of the nonlinear circuit models developed previously by authors. As the resonator has been connected to the measurement bench by wire bonding, the parasitic elements of this connection have been taken into account, being estimated solving some electrical and magnetic field problems

A Frequency Reference for Carrier Synthesis in Wireless Standard 802.11g

“…As, having no available BAW AlN technology, we cannot design this resonator, we start from a device fabricated by CEA-LETI [6], whose parameters will be modified in order to be suited to our purpose. The resonator A in [6] has the series and parallel resonance frequencies fs=2.033 GHz fp=2.081 GHz, the low frequency capacity Clf=1.824 pF and the quality factor at fs Qs=1000. It has also the AlN thickness b=1.17 μm.…”

“…It has also the AlN thickness b=1.17 μm. In order to change the parallel frequency value to fp1 =0.95 GHz, b is changed to b1=b•fp/fp1=2.5038 μm [6]. The other parameters of the new resonator are: fs1=fp sqrt(1-kt 2 ) =0.928 GHz, Clf1=Clffp1/fp=0.8326 pF, kt 2 =4.5%;the parameters of the resonator equivalent circuit in Fig 4b and Fig 5 can be computed using the values Cm1=Clf1* kt 2 =0.8326* 0.0455=0.037 pF, C01=Clf1*(1-kt 2 ) =0.7947 pF, Lm1 =1/(Cm1*ωs 2 ) =0.795µH.…”

“…Small signal behavior of an AlN BAW resonator a) frequency characteristic, b) linear equivalent circuitIf a certain input power level is exceeded the nonlinear equivalent circuit inFigure 5can be used[5,6].…”