Parasitic engineering for RRAM control

Resistive Switching in Few-Layer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge Transfer

“…Figure f shows a real-time oscilloscope measurement of input and output voltages for set transition under a rectangular pulsed voltage of 1 V and 100 ns width. The spike of output voltage appearing at the pulse-on moment is attributed to the parasitic capacitance of the device . The switching time ( t set ) for set transition is evaluated to be ∼25 ns, indicating the fast switching speed of the device. , The energy consumption for set transition is calculated to be ∼50 pJ by using E = V set × I set × t set , where V set is the set voltage, and I set is the LRS current at the set voltage …”

Uniformity Improvement of Ti/ZrO2/Pt RRAM by Analyzing and Reducing Current Overshoot

“…This has become one of the potential obstacles to the application of RRAM. 17 Therefore, it is necessary to use certain methods to prevent overcurrent to improve the stability of the device and reduce its power consumption. According to reports, various methods have been adopted to improve device uniformity and power consumption performance, including doping, construction of double-layer device structures, and the use of 1T1R storage units.…”

“…Due to the presence of overcurrent, the power consumption of the device increases, and the characteristics of the device become unstable. This has become one of the potential obstacles to the application of RRAM . Therefore, it is necessary to use certain methods to prevent overcurrent to improve the stability of the device and reduce its power consumption.…”