Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect

Fox, Eli; Rosen, Ilan T.; Yang, Yue; Jones, George R.; Elmquist, Randolph E.; Kou, Xufeng; Pan, Lei; Wang, Kang L.; Goldhaber‐Gordon, David

doi:10.1103/physrevb.98.075145

Cited by 84 publications

(75 citation statements)

References 68 publications

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“…As described in fig.35a from ref. [299], the gapless chiral edge state is hosted in the exchange-induced gap in the Dirac spectrum of the topological surface states inside the 3D bulk gap. The Hall 57 resistance is quantized for a Fermi level in the surface-state gap.…”

Section: Further Perspectivesmentioning

confidence: 99%

“…Accurate comparisons of the Hall resistances measured both in a FTI at zero magnetic field and in a GaAs-based reference standard were recently performed using a CCC-based resistance bridge. Actually, Fox and co-authors [299] have demonstrated the quantization of the Hall resistance with a relative uncertainty of about one part in 10 6 at a temperature of 21 mK for a measurement current of 100 nA in a top-gated 100 µm wide Hall bar made of 6-quintuple-layer sample of Cr 0.12 (Bi 0.26 Sb 0.62 ) 2 Te 3 grown on a GaAs substrate by molecular beam epitaxy (MBE). Limitations in temperature and current are explained by an effective energy gap much lower than expected and strong electron heating in bulk current flow respectively.…”

Section: Further Perspectivesmentioning

confidence: 99%

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The ampere and the electrical units in the quantum era

Poirier

Djordjevic

Schopfer

et al. 2019

Comptes Rendus. Physique

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By fixing two fundamental constants from quantum mechanics, the Planck constant h and the elementary charge e, the revised Système International (SI) of units endorses explicitly quantum mechanics. This evolution also highlights the importance of this theory which underpins the most accurate realization of the units. From 20 May 2019, the new definitions of the kilogram and of the ampere, based on fixed values of h and e respectively, will particularly impact the electrical metrology. The Josephson effect (JE) and the quantum Hall effect (QHE), used to maintain voltage and resistance standards with unprecedented reproducibility since 1990, will henceforth provide realizations of the volt and the ohm without the uncertainties inherited from the older electromechanical definitions. More broadly, the revised SI will sustain the exploitation of quantum effects to realize electrical units, to the benefit of end-users. Here, we review the state-of-the-art of these standards and discuss further applications and perspectives.

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Section: Further Perspectivesmentioning

confidence: 99%

Section: Further Perspectivesmentioning

confidence: 99%

The ampere and the electrical units in the quantum era

Poirier

Djordjevic

Schopfer

et al. 2019

Comptes Rendus. Physique

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“…[3][4][5] Dissipationless, chiral 1D conduction is also expected along magnetic domain walls, [6][7][8][9] but explicit experimental confirmation of this prediction has proven elusive.…”

Section: Introductionmentioning

confidence: 99%

“…21 Each jump likely represents rearrangement of the magnetic domain structure. Since within a domain the 2D bulk of an MTI is highly insulating at the lowest temperatures, 3,4 these jumps suggest that domain walls host conductive modes. The set of discrete R yx values is not reproducible between separate magnetic field sweeps, suggesting that the network of magnetic domain walls is complex.…”

Section: Introductionmentioning

confidence: 99%

Chiral transport along magnetic domain walls in the quantum anomalous Hall effect

et al. 2017

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The quantum anomalous Hall effect in thin film magnetic topological insulators (MTIs) is characterized by chiral, one-dimensional conduction along the film edges when the sample is uniformly magnetized. This has been experimentally confirmed by measurements of quantized Hall resistance and near-vanishing longitudinal resistivity in magnetically doped (Bi,Sb) 2 Te 3 . Similar chiral conduction is expected along magnetic domain walls, but clear detection of these modes in MTIs has proven challenging. Here, we intentionally create a magnetic domain wall in an MTI, and study electrical transport along the domain wall. In agreement with theoretical predictions, we observe chiral transport along a domain wall. We present further evidence that two modes equilibrate while co-propagating along the length of the domain wall.npj Quantum Materials (2017) 2:69 ; doi:10.1038/s41535-017-0073-0 INTRODUCTIONThe recent prediction 1 and subsequent discovery 2 of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional magnetic topological insulator (MTI) (Cr y Bi x Sb 1−x−y ) 2 Te 3 has opened new possibilities for chiral-edge-state-based devices in zero external magnetic field. Like the ν = 1 quantum Hall (QH) system, the QAH system is predicted to have a single chiral edge mode circulating along the boundary of the film. Backscattering of the chiral edge mode should be suppressed, as recently verified by the observation of well-quantized Hall resistivities |ρ yx | = (1 ± 10

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“…The anomalous Hall effect (AHE), despite being first reported over a hundred years ago, [1] remains of significant modern research interest as its investigation in novel magnetic materials continues to yield rich physics. Recent examples of this are the quantum anomalous Hall effect [2][3][4][5][6][7][8][9][10][11][12], which offers both potential for metrological applications [13,14] and for the academic study of axion electrodynamics [5,12,15,16], as well as reports on alleged contribution to the Hall effect [17][18][19][20][21][22][23][24] associated with skyrmion magnetic textures.…”

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confidence: 99%

Coexistence of Surface and Bulk Ferromagnetism Mimics Skyrmion Hall Effect in a Topological Insulator

Fijalkowski¹,

Hartl²,

Winnerlein³

et al. 2020

Phys. Rev. X

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Here we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)2Te3. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier density, leading to a sign inversion of the total anomalous Hall effect as a function of applied gate voltage. The two contributions are found to have different magnetization reversal fields, which in combination with a temperature dependent study points towards the coexistence of two ferromagnetic orders in the system. Moreover, we find that the sign of total anomalous Hall response of the system depends on the thickness and magnetic doping density of the magnetic layer. The thickness dependence suggests that the two ferromagnetic components originate from the surface and bulk of the magnetic topological insulator film. We believe that our observations provide insight on the magnetic behavior, and thus will contribute to an eventual understanding of the origin of magnetism in this material class. In addition, our data bears a striking resemblance to anomalous Hall signals often associated with skyrmion contributions. Our analysis provides a straightforward explanation for both the magnetic field dependence of the Hall signal and the observed change in sign without needing to invoke skyrmions, and thus suggest that caution is needed when making claims of effects from skyrmion phases. arXiv:1912.02766v1 [cond-mat.mes-hall]

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Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect

Cited by 84 publications

References 68 publications

The ampere and the electrical units in the quantum era

The ampere and the electrical units in the quantum era

Chiral transport along magnetic domain walls in the quantum anomalous Hall effect

Coexistence of Surface and Bulk Ferromagnetism Mimics Skyrmion Hall Effect in a Topological Insulator

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