Particle-in-cell numerical simulation of non-uniform plasma immersion ion implantation

Huang, Yongxian; Xia, Tian; Yang, Shilin; Fu, Ricky K.Y.; Chu, Paul K.

doi:10.1016/j.surfcoat.2006.07.010

Cited by 6 publications

(1 citation statement)

References 20 publications

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“…1 Although the electron density is quite uniform in the vicinity of the negatively biased stage, 8,9 the ion focusing phenomenon has been observed, especially in hydrogen PIII. Ion focusing in conventional PIII has been studied by Stamate 10 and Tian,11,12 and in EGD-PIII, the plasma density and negative cathode voltage influence ion focusing. 13 The potential lateral ion fluence non-uniformity in EGD-PIII impacts negatively its application to the ion-cutting and layer transfer technology which requires uniform hydrogen ion implantation into a large silicon wafer.…”

Section: Introductionmentioning

confidence: 99%

Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

Luo

Liu

et al. 2014

Review of Scientific Instruments

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Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering.

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