Particle Precipitation in Connection with KOH Etching of Silicon

Nielsen, Christian B.; Christensen, Carsten; Pedersen, Christoffer Mølleskov; Thomsen, Erik Vilain

doi:10.1149/1.1688802

Cited by 14 publications

(8 citation statements)

References 17 publications

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“…Each sample was sonicated in concentrated hydrochloric acid prior to retrieval and subsequently dipped in HF (10 s) to remove KOH induced particle precipitation. [57] The average surface roughness (Ra) for each case was determined from 3 lm × 3 lm areas. The results show that TMAH and KOH/IPA yield smooth surfaces (Ra = 0.31 nm and 0.45 nm, respectively) with no systematic differences.…”

Section: Anisotropic Etchant/additives Study and Surface Morphologymentioning

confidence: 99%

Printable Single‐Crystal Silicon Micro/Nanoscale Ribbons, Platelets and Bars Generated from Bulk Wafers

Baca

Meitl

et al. 2007

Adv Funct Materials

125

119

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This article demonstrates a method for fabricating high quality single‐crystal silicon ribbons, platelets and bars with dimensions between ∼ 100 nm and ∼ 5 cm from bulk (111) wafers by using phase shift and amplitude photolithographic methods in conjunction with anisotropic chemical etching procedures. This “top‐down” approach affords excellent control over the thicknesses, lengths, and widths of these structures and yields almost defect‐free, monodisperse elements with well defined doping levels, surface morphologies and crystalline orientations. Dry transfer printing these elements from the source wafers to target substrates by use of soft, elastomeric stamps enables high yield integration onto wafers, glass plates, plastic sheets, rubber slabs or other surfaces. As one application example, bottom gate thin‐film transistors that use aligned arrays of ribbons as the channel material exhibit good electrical properties, with mobilites as high as ∼ 200 cm2 V–1 s–1 and on/off ratios > 104.

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Section: Anisotropic Etchant/additives Study and Surface Morphologymentioning

confidence: 99%

Printable Single‐Crystal Silicon Micro/Nanoscale Ribbons, Platelets and Bars Generated from Bulk Wafers

Baca

Meitl

et al. 2007

Adv Funct Materials

125

119

View full text Add to dashboard Cite

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“…Prior to the introduction into the MBE system, the samples were wet chemically cleaned using diluted HCl, piranha, and diluted HF. Subsequently, a thin silicon oxide layer was created by wet chemical reoxidation in hydrogen peroxide. , …”

mentioning

confidence: 99%

Crystal Phase Transformation in Self-Assembled InAs Nanowire Junctions on Patterned Si Substrates

et al. 2016

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We demonstrate the growth and structural characteristics of InAs nanowire junctions evidencing a transformation of the crystalline structure. The junctions are obtained without the use of catalyst particles. Morphological investigations of the junctions reveal three structures having an L-, T-, and X-shape. The formation mechanisms of these structures have been identified. The NW junctions reveal large sections of zinc blende crystal structure free of extended defects, despite the high stacking fault density obtained in individual InAs nanowires. This segment of zinc blende crystal structure in the junction is associated with a crystal phase transformation involving sets of Shockley partial dislocations; the transformation takes place solely in the crystal phase. A model is developed to demonstrate that only the zinc blende phase with the same orientation as the substrate can result in monocrystalline junctions. The suitability of the junctions to be used in nanoelectronic devices is confirmed by room-temperature electrical experiments.

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“…(The ratio of etch rates between (100) and (111) planes is ≈600. ) Substrates were subsequently bathed in dilute hydrochloric acid to remove contaminant particles and etched in dilute hydrofluoric acid to remove the nitride layer. This procedure yielded a sufficiently smooth, mirror-like surface on the etched walls.…”

Section: Methodsmentioning

confidence: 99%

3D Particle Trajectories Observed by Orthogonal Tracking Microscopy

et al. 2009

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We demonstrate high-resolution, high-speed 3D nanoparticle tracking using angled micromirrors. When angled micromirrors are introduced into the field of view of an optical microscope, reflected side-on views of a diffusing nanoparticle are projected alongside the usual direct image. The experimental design allows us to find the 3D particle trajectory using fast, centroid-based image processing, with no nonlinear computing operations. We have tracked polystyrene particles of 190 nm diameter with position measurement precision <20 nm in 3D with 3 ms frame duration (i.e., at an imaging rate >330 frames per second). Because the image processing requires only approximately 1 ms per frame, this technique could enable real-time feedback-controlled nanoparticle assembly applications with nanometer precision.

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Particle Precipitation in Connection with KOH Etching of Silicon

Cited by 14 publications

References 17 publications

Printable Single‐Crystal Silicon Micro/Nanoscale Ribbons, Platelets and Bars Generated from Bulk Wafers

Printable Single‐Crystal Silicon Micro/Nanoscale Ribbons, Platelets and Bars Generated from Bulk Wafers

Crystal Phase Transformation in Self-Assembled InAs Nanowire Junctions on Patterned Si Substrates

3D Particle Trajectories Observed by Orthogonal Tracking Microscopy

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