2005
DOI: 10.1002/adma.200500809
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Particle‐Size Control and Patterning of a Charge‐Transfer Complex for Nanoelectronics

Abstract: 5-7 mm in length were used. The pressure was measured using the pressure dependence of the superconducting transition temperature of a built-in pressure sensor made of high-purity tin [23]. Experimental data were corrected for diamagnetism using Pascal's constants.Visible Absorption Spectroscopy under Hydrostatic Pressure: Full absorption spectra were recorded between 450 and 750 nm by using a Carl Zeiss PGS-2 spectrometer. The hydrostatic-pressure cell made of hardened beryllium bronze with NaCl as the pressu… Show more

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Cited by 100 publications
(92 citation statements)
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References 44 publications
(14 reference statements)
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“…[18][19][20] Bulk and thin-film TCNQ-Cu devices have been widely studied in the past. [21,22] While the properties of TCNQ-Cu organic nanowires offer many advantages over their bulk and thin-film counterparts, their integration into high-density memory and sensor arrays is limited by the sensitivity of this organic nanomaterial during normal nanofabrication processing steps. TCNQ-Cu nanowires are sensitive to electron-beam irradiation, ruling out electron-beam lithography and focused ionbeam deposition as processing techniques for their integration into devices.…”
mentioning
confidence: 99%
“…[18][19][20] Bulk and thin-film TCNQ-Cu devices have been widely studied in the past. [21,22] While the properties of TCNQ-Cu organic nanowires offer many advantages over their bulk and thin-film counterparts, their integration into high-density memory and sensor arrays is limited by the sensitivity of this organic nanomaterial during normal nanofabrication processing steps. TCNQ-Cu nanowires are sensitive to electron-beam irradiation, ruling out electron-beam lithography and focused ionbeam deposition as processing techniques for their integration into devices.…”
mentioning
confidence: 99%
“…For CuTCNQ, the formation process of its columns can be depicted by a "coalescence" mechanism. The primary product is always the kinetic product of nanorods, and the nanorods tend to aggregate with each other, so that they quickly evolve into "square columns" with widths of several hundreds of nanometers [29]. 2 were fabricated with a coplanar electrode geometry.…”
mentioning
confidence: 99%
“…In particular, the discovery of electrically and optically bistable behaviour and memory effects of both AgTCNQ and CuTCNQ has sparked considerable interest in AgTCNQ and CuTCNQ nonvolatile-based memory devices. [5][6][7][8][9][10] Complementary metal oxide semiconductor devices fabricated from these TCNQ materials have been downscaled in size to an area of 0.25 mm. [9] A range of techniques have therefore been introduced, including vacuum vapour deposition of TCNQ onto metal surfaces at low temperature [11] and thermal vapour deposition of TCNQ on Ag at 150-1808C.…”
Section: Introductionmentioning
confidence: 99%
“…[12] Most published 'wet' methods for AgTCNQ preparation consist of a reaction between dissolved TCNQ in acetonitrile and metallic Ag, where metallic Ag is spontaneously oxidized into Ag þ and TCNQ is reduced into TCNQ À radical anions before precipitating together, resulting in a bluish-black film at the Ag surface. [7,13] Recent contributions from this laboratory have also demonstrated the application of room temperature ionic liquids for the preparation of AgTCNQ by electrocrystallization [14,15] and photocrystallization [16] methods to achieve several novel nanostructures.…”
Section: Introductionmentioning
confidence: 99%