1987
DOI: 10.1109/jqe.1987.1073196
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Partition noise in semiconductor lasers under CW and pulsed operation

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Cited by 42 publications
(24 citation statements)
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“…J is the pumping in electrons per second R ( N ) the total spontaneous recombination rate, r the mode confinement factor, 7p the photon lifetime, Pi the fraction of spontaneous emission coupled into mode i, and B the band-to-band recombination coefficient. The Langevin noise terms F N ( t ) and Fi ( t ) are implemented by generating a set of jointly Gaussian random numbers as described in detail in [3]. This procedure is valid for the typical time step of 5-10 ps.…”
Section: Theorymentioning
confidence: 99%
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“…J is the pumping in electrons per second R ( N ) the total spontaneous recombination rate, r the mode confinement factor, 7p the photon lifetime, Pi the fraction of spontaneous emission coupled into mode i, and B the band-to-band recombination coefficient. The Langevin noise terms F N ( t ) and Fi ( t ) are implemented by generating a set of jointly Gaussian random numbers as described in detail in [3]. This procedure is valid for the typical time step of 5-10 ps.…”
Section: Theorymentioning
confidence: 99%
“…0733-8724/89/0400-0657$01 .OO O 1989 IEEE The gain Gi ( N ) is assumed to have a parabolic wavelength dependence but contrary to [3] the wavelength shift of the gain maximum X o ( N ) with carrier number (i.e., the band filling effect) is also taken into account. The nonlinear gain is implemented in a simplified form [9] and with the usual linear dependence on the carrier number the gain is given by where GN is a gain coefficient, No the carrier number at transparency, Xi the wavelength of the ith mode and AXG the width of the gain curve (FWHM).…”
Section: Theorymentioning
confidence: 99%
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