Passivating antireflection coating of crystalline silicon using i/n a-Si:H/SiN trilayer

Nunomura, Shota; Sakata, Isao; Sato, Aiko; Lozac’h, Mickaël; Misawa, Tatsuya; Itagaki, Naho; Shiratani, Masaharu

doi:10.1016/j.jpcs.2021.110127

Cited by 9 publications

(7 citation statements)

References 42 publications

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“…the c-Si surface passivation. [39][40][41][42]56) The increase is relatively large for a thick a-Si:H layer; I p is increased by one order of magnitude for an a-Si:H layer of d ≈ 17 nm, compared with that of the initial state, i.e. before the growth of an a-Si:H layer.…”

Section: Photocurrent In Soi With a Low Defect A-si:h Layermentioning

confidence: 98%

Ion bombardment-induced defect reduction at a-Si:H/c-Si interfaces: possible microstructural changes and mobile hydrogen roles

Nunomura

Sakata

2022

Jpn. J. Appl. Phys.

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A beneficial effect of argon (Ar) ion bombardment for crystalline silicon (c-Si) surface passivation has been studied. Experiments of an Ar plasma treatment over an hydrogenated amorphous silicon (a-Si:H) layer grown on c-Si are performed, where an a-Si:H layer is prepared at different levels of defect density. Interestingly, the c-Si surface passivation is improved by an Ar plasma treatment for a defect-rich, i.e. low-quality, a-Si:H layer, while it is deteriorated by the treatment for a low-defect, i.e. high-quality, a-Si:H layer. The improvement of passivation is discussed in terms of microstructural changes of a-Si:H, associated with redistribution of hydrogen, where mobile hydrogens play an important role.

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Section: Photocurrent In Soi With a Low Defect A-si:h Layermentioning

confidence: 98%

Ion bombardment-induced defect reduction at a-Si:H/c-Si interfaces: possible microstructural changes and mobile hydrogen roles

Nunomura

Sakata

2022

Jpn. J. Appl. Phys.

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“…Fortunately, in a broad wavelength regime, silicon nitride (SiN x ) has a comparable refractive index (as shown in Figure S3, Supporting Information) to ITO when grown under the right conditions. [ 27 ] Unlike ITO, the absorption coefficient of SiN x is negligible. When the ITO layer is set to 10 nm to reduce the parasitic absorption and still maintain some of the electrical properties, Figure 6b shows that an additional 55 nm of SiN X in combination with 110 nm MgF 2 is needed for optimal antireflective properties.…”

Section: Potential Of the Tpcmentioning

confidence: 99%

Optical Optimization Potential of Transparent‐Passivated Contacts in Silicon Solar Cells

et al. 2022

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Herein, an optical loss analysis of the recently introduced silicon carbide–based transparent passivating contact (TPC) for silicon heterojunction solar cells is presented, the most dominant losses are identified, and the potential for reducing these losses is discussed. Magnesium fluoride is applied as an antireflective coating to reduce the reflective losses by up to 0.8 mA cm−2. When applying the magnesium fluoride, the passivation quality of the layer stack degrades, but is restored after annealing on a hot plate in ambient air. Afterwards, a road map for TPC solar cells toward an efficiency of 25% is presented and discussed. The largest part in efficiency gain is achieved by reducing the finger width and by increasing the passivation quality. Furthermore, it is shown that TPC solar cells have the potential to achieve short‐circuit current densities above 42 mA cm−2 if the finger width is reduced and the front‐side indium tin oxide (ITO) layer can be replaced by an ITO silicon nitride double layer.

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“…This solar cell needs an anti-reflection layer(ARL) with a wider working waveband. However, most of the studies only focus on the common cell operating waveband [9,10], the near-infrared(NIR) solar cells, which can absorb longer wavelength photons, still lack ARLs to match their operating waveband.…”

Section: Introductionmentioning

confidence: 99%

New multilayer film photonic crystal grating multilayer anti-reflection layer for visible-near-infrared solar cells

Chenghao,

Jun,

Yapeng

et al. 2024

Eng. Res. Express

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In this paper, a new anti-reflection layer(ARL) is designed by the finite element method, which is made of parabolic air slots with periodic distribution etched on a multilayer film structure with optimized thickness. The effective transmissivity in the 400-1450nm band is formulated in conjunction with the AM1.5 solar spectrum, and the effects of the air slot depth (H), depth-to-width ratio, and the size of period (T) on the transmissivity of the ARL are investigated separately. By optimizing the structural parameters, a new type of ARL with H=310nm and T=105nm acting in the 400-1450 nm waveband was obtained. The transmissivity of this stacked structure ARL is improved and the stability of the transmission effect in the full waveband is enhanced compared to the conventional membrane structure and the emerging micro-nano-optical structure. The effective transmissivity of this multilayer film photonic crystal grating ARL is calculated to be 98.43% in the operating full waveband (400-1450nm) of the Si-0.86eVPbS double-junction solar cell. The transmissivity is higher than 93.83% of multilayer film ARL and 97.13% of TiO2 grating ARL.

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Passivating antireflection coating of crystalline silicon using i/n a-Si:H/SiN trilayer

Cited by 9 publications

References 42 publications

Ion bombardment-induced defect reduction at a-Si:H/c-Si interfaces: possible microstructural changes and mobile hydrogen roles

Ion bombardment-induced defect reduction at a-Si:H/c-Si interfaces: possible microstructural changes and mobile hydrogen roles

Optical Optimization Potential of Transparent‐Passivated Contacts in Silicon Solar Cells

New multilayer film photonic crystal grating multilayer anti-reflection layer for visible-near-infrared solar cells

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