Advanced Microelectronics
DOI: 10.1007/978-3-540-71491-0_4
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Passivation and Characterization of Germanium Surfaces

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Cited by 15 publications
(23 citation statements)
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“…14,17 At negative potentials, two absorption peaks observed at 1990 cm À1 and 2015 cm À1 were assigned to stretching modes from GeH and GeH 2 groups, respectively. 17 This assignment was based on the data gathered under vacuum conditions, 28 and agrees with the results from force field calculations. 29 To describe the full series of spectra completely and assign the different peaks observed on both Ge surfaces, at least three different components are required, centred around B2025-2030 cm À1 ( ), B2000-2015 cm À1 ( ) and B1977-1990 cm À1 ( ), with minor differences in maxima between Ge(100) and Ge(111) surfaces (see above).…”
Section: Post-mortem Surface Analysissupporting
confidence: 74%
“…14,17 At negative potentials, two absorption peaks observed at 1990 cm À1 and 2015 cm À1 were assigned to stretching modes from GeH and GeH 2 groups, respectively. 17 This assignment was based on the data gathered under vacuum conditions, 28 and agrees with the results from force field calculations. 29 To describe the full series of spectra completely and assign the different peaks observed on both Ge surfaces, at least three different components are required, centred around B2025-2030 cm À1 ( ), B2000-2015 cm À1 ( ) and B1977-1990 cm À1 ( ), with minor differences in maxima between Ge(100) and Ge(111) surfaces (see above).…”
Section: Post-mortem Surface Analysissupporting
confidence: 74%
“…43,44,45 Under these aqueous conditions, the laborious and hazardous pre-treatment with aqueous HF is not needed, as the Ge oxide at the surface is water soluble. 46 The chemical grafting of diazonium salts All these modified surfaces were then characterized by contact angle measurements and the results were compared to those obtained with bare surfaces (i.e., surfaces that were treated similarly to the modified ones but in the absence of the diazonium salt). Contact angles of 62 ± 9° and 30 ± 10° were obtained respectively for bare Au and Ge substrates ( Table 1).…”
Section: Resultsmentioning
confidence: 99%
“…Higher annealing temperatures (>450 C) results in the desorption of GeO to produce an almost oxide-free surface 35,37 with some residual Ge 3+ still present at 500 C. 37 The presence of water vapour greatly accelerates the rate of Ge oxidation, 38 as does exposure to UV light producing predominately GeO 2 . 39 Prolonged ambient exposure (60 days) of Ge nanowires results in the disappearance of the Ge 1+ oxidation state and the formation of a predominately Ge 4+ oxide. 40 The oxidation behaviour of Ge nanowires is also dependent on the dopant type; 41 ambient exposure for 2 min after annealing of p-type Ge nanowires resulted in the rapid formation of GeO, followed by the slower formation of GeO 2 over a few hours.…”
Section: Oxidation Of Ge Nanowiresmentioning
confidence: 99%