2009
DOI: 10.2478/s11534-009-0025-9
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Passivation of defect states in surface and edge regions on pn-junction Si solar cells by use of hydrogen cyanide solutions

Abstract: Abstract:The local photovoltage of the pn-junction single-crystalline silicon solar cells observed by spot light scanning gradually decreases in the vicinity of edges.

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Cited by 4 publications
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“…Therefore several techniques have been developed to passivate defects, mainly based on beneficial effects of hydrogen. Among wet passivation techniques cyanide method including immersion of semiconductor structures in dilute cyanide solutions was successfully applied enabling also metal species removal in addition [5][6][7][8]. The principle is that surface defect states are passivated by Si-CN bonds that are stable up to 800 • and under visible/UV radiation.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore several techniques have been developed to passivate defects, mainly based on beneficial effects of hydrogen. Among wet passivation techniques cyanide method including immersion of semiconductor structures in dilute cyanide solutions was successfully applied enabling also metal species removal in addition [5][6][7][8]. The principle is that surface defect states are passivated by Si-CN bonds that are stable up to 800 • and under visible/UV radiation.…”
Section: Introductionmentioning
confidence: 99%