Silicon nanocrystal photovoltaic device fabricated via photolithography and its current–voltage temperature dependence

Wu, Lingfeng; Zhang, Tian; Lin, Ziyun; Jia, Xuguang; Puthen-Veettil, Binesh; Yang, Terry Chien‐Jen; Xia, Hongze; Conibeer, Gavin; Perez-Würfl, Ivan

doi:10.1016/j.solmat.2014.06.007

Cited by 15 publications

(2 citation statements)

References 9 publications

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“…Current crowding and high series resistance were encountered for p-i-n Si QD solar cell devices with an open-circuit voltage of 493 V, fabricated by Perez-Wurfl et al [12], [13]. Recent efforts in Si QD solar cell devices have focused on higher Si content SRO to avoid current crowding and to decrease series resistance [14]. However, higher Si content SRO theoretically compromises the quantum confinement (i.e.…”

Section: Introductionmentioning

confidence: 99%

High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

Yang

Nomoto

Lin

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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Si quantum dots or interchangeably Si nanocrystals are promising materials for all-Si tandem solar cells in next generation photovoltaics. Si QDs in this study were fabricated by annealing sputtered Si rich oxide/SiO 2 (SRO/SiO 2 ) bilayer superlattice thin-films. Advantages of high Si content SRO layers include lower resistivity and higher light absorption crosssections which are more suitable for photovoltaic devices. However, theoretically high Si content SRO produces greater size distribution and larger Si nanocrystals which in this case slightly lowers the bandgap towards that of crystalline Si. This study investigates the properties of high Si content SRO/SiO 2 bilayer superlattice thin-films and the effect of boron and phosphorus doping.Index Terms -Boron, Doping, Phosphorus, Magnetron Sputtering, Si Quantum Dots, Si Nanocrystals. 978-1-4799-7944-8/15/$31.00 ©2015 IEEE 978-1-4799-7944-8/15/$31.00 ©2015 IEEE

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Section: Introductionmentioning

confidence: 99%

High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

Yang

Nomoto

Lin

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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“…The details of sample preparation are presented in our previous work. 15 A 2-in. B target was used to deposit the dopant.…”

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confidence: 99%

Passivation effects in B doped self-assembled Si nanocrystals

Puthen-Veettil

Jia

et al. 2014

Applied Physics Letters

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Doping of semiconductor nanocrystals has enabled their widespread technological application in optoelectronics and micro/nano-electronics. In this work, boron-doped self-assembled silicon nanocrystal samples have been grown and characterised using Electron Spin Resonance and photoluminescence spectroscopy. The passivation effects of boron on the interface dangling bonds have been investigated. Addition of boron dopants is found to compensate the active dangling bonds at the interface, and this is confirmed by an increase in photoluminescence intensity. Further addition of dopants is found to reduce the photoluminescence intensity by decreasing the minority carrier lifetime as a result of the increased number of non-radiative processes.

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Structural characterization determination of silicon nanocrystals embedded in amorphous silicon nitride matrix from the effect of the light scattering

Hafsi

Bouridah

Boutaoui

et al. 2019

Optik

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Silicon nanocrystal photovoltaic device fabricated via photolithography and its current–voltage temperature dependence

Cited by 15 publications

References 9 publications

High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

High Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping for next generation Si quantum dot photovoltaics

Passivation effects in B doped self-assembled Si nanocrystals

Structural characterization determination of silicon nanocrystals embedded in amorphous silicon nitride matrix from the effect of the light scattering

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