Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films

Abstract

The Ga2O3(Gd2O3) dielectric film was previously discovered to passivate the GaAs surface effectively. We have investigated the systematic dependence of the dielectric properties of (Ga2O3)1−x(Gd2O3)x on the Gd (x) content. Our results show that pure Ga2O3 does not passivate GaAs. Films with x⩾14% are electrically insulating with low leakage current and high electrical breakdown strength. Furthermore, a low interfacial density of states was attained in films with x⩾14%. The results show the important role of Gd2O3 in the (Ga2O3)1−x(Gd2O3)x dielectric films for effective passivation of GaAs.

Anomalous temperature dependence of photoluminescence from stoichiometric GD2O3−x film

“…Gadolinium sesquioxide, one of the promising substitutions with a high dielectric constant for SiO 2 in ultra large-scale integration (ULSI) [3,4], has attracted much attention recently. The studies on gadolinium oxide are focus on structures [5,6], interfacial reaction with silicon [7,8], physical properties [9,10], and as a passivation of GaAs [11,12]. Relatively, the photoluminescence (PL) characters of gadolinium oxide have been studied.…”

Gadolinium oxide thin films by atomic layer deposition

“…Thus, Gd 2 O 3 has been considered as a promising alternative gate dielectric candidate replacing SiO 2 in future metal oxide semiconductor field-effect transistors (MOSFET) [1]. Furthermore, the discovery of epitaxial Gd 2 O 3 as passivating and insulating layer on GaAs(1 0 0) has gained considerable attention and thus, GaAs as well as GaN-based MOSFET devices with Gd 2 O 3 and Ga 2 O 3 -Gd 2 O 3 insulators are widely studied [3][4][5]. Other applications of Gd 2 O 3 thin films include protective coatings [6], waveguides [7] as well as buffer layers in superconductors [8].…”

GaN Electronics

“…In comparison, Ga 2 O 3 (Gd 2 O 3 ) films of similar thickness on GaAs show a more symmetrical curve of leakage current versus biasing voltage and lower leakage current. [79,80] The asymmetrical characteristics and the higher leakage current in the I±V for Ga 2 O 3 (Gd 2 O 3 ) on GaN may be due to a rougher GaN surface. Note that a good GaAs surface roughness can be as small as 2 .…”