Passivation of GaAs using gallium-gadolinium oxides

Abstract

Articles you may be interested inGallium oxide and gadolinium gallium oxide insulators on Si δ -doped GaAs/AlGaAs heterostructures J. Appl. Phys.The role of Gd 2 O 3 is investigated in our previously discovered oxide films of Ga 2 O 3 ͑Gd 2 O 3 ͒ for GaAs surface passivation. Based on the systematic dependence of the dielectric properties of ͑Ga 2 O 3 ͒ 1Ϫx (Gd 2 O 3 ) x on the Gd ͑x͒ content, we showed that pure gallium oxide does not effectively passivate GaAs, and Gd 2 O 3 is a necessary component to stabilize the gallium oxide in the 3 ϩ fully oxidized state due to the electropositive nature of Gd ϩ3 . This gives rise to electrically insulting films of low leakage current and high electrical breakdown strength.

Anomalous temperature dependence of photoluminescence from stoichiometric GD2O3−x film

“…Gadolinium sesquioxide, one of the promising substitutions with a high dielectric constant for SiO 2 in ultra large-scale integration (ULSI) [3,4], has attracted much attention recently. The studies on gadolinium oxide are focus on structures [5,6], interfacial reaction with silicon [7,8], physical properties [9,10], and as a passivation of GaAs [11,12]. Relatively, the photoluminescence (PL) characters of gadolinium oxide have been studied.…”

Nanometer‐Thick Single‐Crystal Hexagonal Gd2O3 on GaN for Advanced Complementary Metal‐Oxide‐Semiconductor Technology

“…The enhancement of k from $14 (cubic) [28] to $24 (hexagonal) result in the decrease in molar volume using the ClausiusMossotti relation [20] ( Table 1). The lattice constants and the molar volumes of cubic [25,26] and hexagonal Gd 2 O 3 were measured very accurately with high-resolution X-ray diffraction (HR-XRD) using synchrotron radiation, as listed in Table 1.…”

InGaAs Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS

“…21 Furthermore, the initial growth of GGO on GaAs was found to be single crystal Gd 2 O 3 . 21 Furthermore, the initial growth of GGO on GaAs was found to be single crystal Gd 2 O 3 .…”