1999
DOI: 10.1016/s0038-1101(99)00087-8
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Passivation of InP-based HBTs

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Cited by 14 publications
(14 citation statements)
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“…Details about the facility were given in Ref. 3 The native oxide acts as nonradiative recombination center. The temperature of the sample holder was maintained at 20°C during the deposition.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Details about the facility were given in Ref. 3 The native oxide acts as nonradiative recombination center. The temperature of the sample holder was maintained at 20°C during the deposition.…”
Section: Methodsmentioning
confidence: 99%
“…[1][2][3] The graded base structure is typically used to reduce the surface recombination. The reduction of the device size is necessary for the high speed, low power consumption and large scale integration.…”
Section: Introductionmentioning
confidence: 99%
“…In the case of InP-based HBTs, this is unfortunately not that trivial and the device characteristics are usually damaged after CVD deposition. [28][29][30] The effects of the ALD-Al 2 O 3 processes are shown by comparing the electrical characteristics of InGaAs/InP HBTs before and after passivation. Figure 5 shows the Gummel plots (collector and base currents as a function of the base-emitter voltage) of large area (S EB = 100 × 100 μm 2 ) InGaAs/InP HBTs before (dotted lines) and after passivation with thermal-ALD-Al 2 O 3 (squared solid lines) and plasma-ALD-Al 2 O 3 (solid lines).…”
Section: Film Properties Of Thermal-ald-al 2 O 3 and Plasma-ald-al mentioning
confidence: 99%
“…[27][28][29][30][41][42][43][44][45] However, depending on the layer structure and fabrication process, the reported degree of the degradation can vary from less pronounced to very drastic. The increased leakage currents have often been attributed to the pinning of the surface Fermi level along the passivated surfaces.…”
Section: Film Properties Of Thermal-ald-al 2 O 3 and Plasma-ald-al mentioning
confidence: 99%
“…In the case of InGaAs/InP heterostructure bipolar transistors (HBTs), the output characteristics are drastically degraded during or after SiO x or SiN x encapsulation using chemical vapour deposition (CVD)-based techniques [5][6][7].…”
Section: Introductionmentioning
confidence: 99%