Passivation of intragrain defects by copper diffusion in p-type polycrystalline silicon

Zehaf, M.; Mathian, G.; Singal, C. M.; Martinuzzi, S.

doi:10.1051/rphysap:01983001809055700

Cited by 3 publications

(3 citation statements)

References 9 publications

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“…The decreased intensities of the FZ samples observed at 77 K are brought about by a nonradiative recombination center (or centers) formed in the bulk. The surface passivation by Cu is not unfamiliar; it has long been known 23,24) and the increase in the minority carrier lifetime We observed X-band (9.5 GHz) electron paramagnetic resonance (EPR) spectra 25) of the aforementioned samples at room temperature to investigate the surface recombination center. We employed both FZ and Cz samples diffused with 6 Â 10 13 cm À2 of Cu before etching and those formed with the new chemical oxide after the etching.…”

Section: Origin Of the Enhancement Of The Bde-pl Intensitymentioning

confidence: 99%

Unusual Band-Edge Photoluminescence Intensity Emitted by Cu-Diffused Silicon Crystals

Nakamura

Murakami

2010

Jpn. J. Appl. Phys.

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Elementary processes in the atmosphere involving ozone, which lead to a reduction of the electric strength are considered. It is shown that elementary processes in the atmosphere under the action of an electric field lead lo ozone accumulation which, in turn, causes an increase of the electron density. Electrical breakdown of atmospheric air is considered lo be a result of the onset of kinetic instability. The threshold condition for this instability connects the background ozone number density and the electric field strength. This connection is derived on the basis of a simplified model which includes the processes of formation and destruction of both negative oxygen ions and ozone molecules. as well as the ionization of molecules by electron impact and mutual ion recombination. Evidently, the processes considered contribute to a reduction in the electrical strength of the atmosphere during thunderstorms.

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Section: Origin Of the Enhancement Of The Bde-pl Intensitymentioning

confidence: 99%

Unusual Band-Edge Photoluminescence Intensity Emitted by Cu-Diffused Silicon Crystals

Nakamura

Murakami

2010

Jpn. J. Appl. Phys.

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“…This point is very interesting since other authors found a passivation effect of the GBs by Al diffusion at low. temperature (= 400 °C) [85,86]. AI-0 complexes have been suspected to be at the origin of the activation [64], The spectrum recorded in the matrix (vertical black lines, no Al signal) is superimposed to the one recorded on the GB (doted line, Al signal).…”

Section: Foreign Atom Segregationmentioning

confidence: 99%

“…Cu diffusion at 400-500 °C passivates the GBs, and it also enhances the bulk minority carrier diffusion length [86]. H implantation or diffusion is widely used to passivate not only the grain boundary but also the bulk recombination centres [22,87,88].…”

Section: Foreign Atom Segregationmentioning

confidence: 99%

On the origin of the electrical activity in silicon grain boundaries

Maurice

1987

Rev. Phys. Appl. (Paris)

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Grain boundaries in silicon are traps for both types of charge carriers. This electrical activity is related to deep levels in the forbidden energy gap, which may have two origins : chemical and extrinsic or structural and intrinsic. Present knowledge on planar symmetric grain boundaries, which are fully reconstructed, induces an extrinsic origin of these levels. However, dangling bonds detected in general grain boundaries indicate that an intrinsic origin of the electrical activity is still possible

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Copper passivation of dislocations in silicon

Lee

Morrison

1988

Journal of Applied Physics

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The J-V characteristics of metal-insulator-semiconductor solar cells fabricated on Si samples which are damaged (lapped) with I-pm grit size of A1 2 0 3 are substantially degraded. The introduction of copper at 250-400 "C passivates the dislocations. The copper is diffused in from the surface. Anodic oxidation followed by etching in aqua regia and 48% HF was used to remove excess copper remaining on the damaged surface and to etch away controlled amounts of the silicon wafers. The experimental results are compared to the model of Divigalpitiya and Morrison [1. App1. Phys. 60, 406 (1986)]. It is concluded using the model that copper passivation reduces the product of the density of hole traps and the capture cross section of hole traps and may also increase the specific conductance of the dislocations. Results for samples lapped with finer-grit alumina (0.3 /lm) seem qualitatively different from those with i-pm alumina. The variation in dislocation density as a function of depth into the surface is used to explain the difference qualitativ(~iy. The dislocation density decreases rapidly with distance from the damaged surface.

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Passivation of intragrain defects by copper diffusion in p-type polycrystalline silicon

Cited by 3 publications

References 9 publications

Unusual Band-Edge Photoluminescence Intensity Emitted by Cu-Diffused Silicon Crystals

Unusual Band-Edge Photoluminescence Intensity Emitted by Cu-Diffused Silicon Crystals

On the origin of the electrical activity in silicon grain boundaries

Copper passivation of dislocations in silicon

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