Unusual Band-Edge Photoluminescence Intensity Emitted by Cu-Diffused Silicon Crystals

Abstract

Elementary processes in the atmosphere involving ozone, which lead to a reduction of the electric strength are considered. It is shown that elementary processes in the atmosphere under the action of an electric field lead lo ozone accumulation which, in turn, causes an increase of the electron density. Electrical breakdown of atmospheric air is considered lo be a result of the onset of kinetic instability. The threshold condition for this instability connects the background ozone number density and the electric field strength. This connection is derived on the basis of a simplified model which includes the processes of formation and destruction of both negative oxygen ions and ozone molecules. as well as the ionization of molecules by electron impact and mutual ion recombination. Evidently, the processes considered contribute to a reduction in the electrical strength of the atmosphere during thunderstorms.

Depth profiles of the nickel donor center in p-type silicon diffused with dilute nickel measured by deep-level transient spectroscopy

“…Aqueous solutions containing three nickel concentrations were spun on the wafer surfaces using a spinning machine to contaminate the wafers with nickel, as described previously. 24) The contamination levels of nickel on the wafers before diffusion were between 2.2 « 0.2 © 10 11 and 2.1 « 0.2 © 10 13 /cm 2 measured using a commercially available total reflection X-ray fluorescence spectrometer (Rigaku TREX610T). The nickel-contaminated wafers were diffused at 525 °C for 10 min, and at 700, 800, and 900 °C for 30 min in a quartz furnace under flowing clean, dry nitrogen gas.…”

“…Temperature scan DLTS measurement was performed using a commercially available spectrometer (SEMILAB DLS-83D), as described previously. 24,25) The bias voltage was ¹5.0 V, and the forward pulse voltage determined from the bias voltage was +4.0 V. The lock-in frequency and pulse width were 244 Hz and 20 µs, respectively. The analytical depths estimated under these conditions were within 3.0 µm from the surface.…”