Passivation Properties of Atomic-Layer-Deposited Hafnium and Aluminum Oxides on Si Surfaces

Wang, Jun; Mottaghian, Seyyed Sadegh; Baroughi, Mahdi Farrokh

doi:10.1109/ted.2011.2176943

Cited by 70 publications

(40 citation statements)

References 25 publications

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“…In the ALD‐Al 2 O 3 ‐passivated n ‐type planar Si, Wang et al . have reported a low density of the interface traps of ~1.8 × 10 11 cm −2 /eV and a high fixed charge density of approximately −3 × 10 12 cm −2 , which indicate the good chemical and field effect passivation, respectively. Saint‐Cast et al .…”

Section: Introductionmentioning

confidence: 99%

An effective way to simultaneous realization of excellent optical and electrical performance in large‐scale Si nano/microstructures

Huang

Zhong

Hua

et al. 2014

Progress in Photovoltaics

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Despite the optical advantage of near-zero reflection, the silicon nanowire arrays (SiNWs)-based solar cells cannot yet achieve satisfactory high efficiency because of the serious surface recombination arising from the greatly enlarged surface area. The trade-off between reflection and recombination fundamentally prevents the conventional SiNWs structure from having both minimal optical and electrical losses. Here, we report the simultaneous realization of the best optical anti-reflection (the solar averaged reflectance of 1.38%) and electrical passivation (the surface recombination velocity of 44.72 cm/s) by effectively combining the Si nano/microstructures (N/M-Strus) with atomic-layer-deposition (ALD)-Al 2 O 3 passivation. The composite structures are prepared on the pyramid-textured Si wafers with large-scale 125 × 125 mm 2 by the two-step metal-assisted chemical etching method and the thermal ALD-Al 2 O 3 treatment. Although the excellent optical anti-reflection is observed because of the complementary contribution of Si N/M-Strus at short wavelength and ALD-Al 2 O 3 at long wavelength, the low recombination has also been realized because the field effect passivation is enhanced for the longer and thinner SiNWs through the more effective suppression of the minority carrier movement and the reduction of the pure-pyramid-textured surface recombination. We have further numerically modeled the Al 2 O 3 -passivated Si N/M-Strus-based solar cell and obtain the high conversion efficiency of 21.04%. The present work opens a new way to realize high-efficiency SiNWs-based solar cells.

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Section: Introductionmentioning

confidence: 99%

An effective way to simultaneous realization of excellent optical and electrical performance in large‐scale Si nano/microstructures

Huang

Zhong

Hua

et al. 2014

Progress in Photovoltaics

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“…HfO 2 films have positive fixed charges and this makes it very suitable for passivation of n-type silicon wafers. There is currently limited research focusing on the passivation of HfO 2 on n-type silicon wafers for silicon solar cells [5,6].…”

Section: Introductionmentioning

confidence: 99%

Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

et al. 2017

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Recombination of charge carriers at silicon surfaces is one of the biggest loss mechanisms in crystalline silicon (c-Si) solar cells. Hafnium oxide (HfO 2 ) has attracted much attention as a passivation layer for n-type c-Si because of its positive fixed charges and thermal stability. In this study, HfO 2 films are deposited on n-type c-Si using remote plasma atomic layer deposition (RP-ALD). Post-annealing is performed using a rapid thermal processing system at different temperatures in nitrogen ambient for 10 min. The effects of post-annealing temperature on the passivation properties of the HfO 2 films on c-Si are investigated. Personal computer one dimension numerical simulation for the passivated emitter and rear contact (PERC) solar cells with the HfO 2 passivation layer is also presented. By means of modeling and numerical computer simulation, the influence of different front surface recombination velocity (SRV) and rear SRV on n-type silicon solar cell performance was investigated. Simulation results show that the n-type PERC solar cell with HfO 2 single layer can have a conversion efficiency of 22.1%. The PERC using silicon nitride/HfO 2 stacked passivation layer can further increase efficiency to 23.02% with an open-circuit voltage of 689 mV.

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“…However, its surface passivation properties, particularly on c-Si, have scantly been studied. For example, Jun Wang et al [9] presented the surface passivation properties of a Si surface using a thin HfO 2 layer grown by ALD without further annealing. In another study Huijuan Geng et al [10] reported advanced passivation using simple materials (Al 2 O 3 , HfO 2 ) and their compounds H (Hf) A (Al) O deposited by ALD.…”

Section: Introductionmentioning

confidence: 99%

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

et al. 2017

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Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO2, resulting in a better chemical passivation. The deposited HfO2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

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Passivation Properties of Atomic-Layer-Deposited Hafnium and Aluminum Oxides on Si Surfaces

Cited by 70 publications

References 25 publications

An effective way to simultaneous realization of excellent optical and electrical performance in large‐scale Si nano/microstructures

An effective way to simultaneous realization of excellent optical and electrical performance in large‐scale Si nano/microstructures

Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

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