Passively Q-switched Tm:YAP laser based on SnS2 saturable absorber

Shi, Zechang; Sun, Xinghong; Xie, Wei; Chang, Penghao; Li, Shiwei; Zhang, Liming; Yang, Xuguang

doi:10.1016/j.ijleo.2022.169421

Cited by 10 publications

(5 citation statements)

References 49 publications

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“…Even more research interest has been generated by the use of two-dimensional (2D) materials as SAs. To date, several 2D materials exhibiting excellent photoelectric performance have been revealed in PQS lasers operating in the 2-μm wavelength range, including graphene, 9 black phosphorus (BP), 10 transitional metal dichalcogenides, [11][12][13][14] topological insulators, [15][16][17] semiconductor materials, 18 MXenes, 19 and heterostructures. 20 Some oxides also have very good photoelectric properties, such as chromium oxide.…”

Section: Introductionmentioning

confidence: 99%

Operation of a passively Q‐switched Tm:YAP laser with Ta₂NiS₅ as a saturable absorber

Huang

Liu

et al. 2023

Micro & Optical Tech Letters

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In this study, the operation of compact diode‐pumped continuous wave and passively Q‐switched (PQS) Tm:YAlO3 (Tm:YAP) solid‐state lasers (SSLs) on the 3F4–3H6 transition is demonstrated. The first PQS operation of a mid‐infrared (mid‐IR) Tm:YAP laser at 1986.64 nm is realized with a Ta2NiS5‐based saturable absorber (SA). Under PQS mode, the Tm:YAP laser generated a maximum output power of 1.278/1.393 W with an optical‐to‐optical conversion efficiency of 8.81%/9.61%, corresponding to a narrowest pulse duration of 787/914 ns and a high repetition frequency of 187.932/151.115 kHz for 1.5%/2.5% transmittance of output coupler. The experimental results show that Ta2NiS5‐based SA is an excellent optical switch for diode‐pumped PQS mid‐IR SSL emitting around 2.0 μm.

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Section: Introductionmentioning

confidence: 99%

Operation of a passively Q‐switched Tm:YAP laser with Ta₂NiS₅ as a saturable absorber

Huang

Liu

et al. 2023

Micro & Optical Tech Letters

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“…Especially in the laser field, TMDs commonly possess a large modulation depth which is advantageous for great Q-switched pulse lasers [ 16 , 17 ]. Until now, many kinds of 2D TMDs, such as MoS 2 , SnS 2 , SnSe 2 , ReS 2 , and MoTe 2 , have been developed to apply in pulse lasers as SA materials [ 17 , 18 , 19 , 20 , 21 , 22 ]. Among them, Tin disulfide (SnS 2 ) belongs to the IV-VI group TMDs with the CdI 2 crystal structure [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

“…Two layers are combined through van der Waals forces, which makes it easy to prepare 2D structures. Furthermore, 2D SnS 2 owns excellent optical and electrical properties, making it widely used in the fields of ultrafast photonics and lasers [ 22 , 23 , 24 ]. Moreover, SnS 2 consists of Sn and S elements which are abundantly stored elements in nature, and they own excellent properties of environmental optimization, low-cost, and nontoxicity [ 25 ].…”

Section: Introductionmentioning

confidence: 99%

SnS2 as a Saturable Absorber for Mid-Infrared Q-Switched Er:SrF2 Laser

Yang

et al. 2023

Nanomaterials

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Two-dimensional (2D) materials own unique band structures and excellent optoelectronic properties and have attracted wide attention in photonics. Tin disulfide (SnS2), a member of group IV-VI transition metal dichalcogenides (TMDs), possesses good environmental optimization, oxidation resistance, and thermal stability, making it more competitive in application. By using the intensity-dependent transmission experiment, the saturable absorption properties of the SnS2 nanosheet nearly at 3 μm waveband were characterized by a high modulation depth of 32.26%. Therefore, a few-layer SnS2 was used as a saturable absorber (SA) for a bulk Er:SrF2 laser to research its optical properties. When the average output power was 140 mW, the passively Q-switched laser achieved the shortest pulse width at 480 ns, the optimal single pulse energy at 3.78 µJ, and the highest peak power at 7.88 W. The results of the passively Q-switched laser revealed that few-layer SnS2 had an admirable non-linear optical response at near 3 μm mid-infrared solid-state laser.

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“…Given its environmental friendliness and abundance, SnS 2 was considered ideal for use in lithium‐ion batteries and photocatalysts 28 . In recent years, SnS 2 has been commonly applied as a modulator to build pulsed lasers 29–31 . However, there was still little attention paid to the performance of SnS 2 as a SA in 2 μm all‐solid‐state lasers.…”

Section: Introductionmentioning

confidence: 99%

“…28 In recent years, SnS 2 has been commonly applied as a modulator to build pulsed lasers. [29][30][31] However, there was still little attention paid to the performance of SnS 2 as a SA in 2 μm all-solid-state lasers. Furthermore, there was output of neither higher repetition frequency nor bigger single pulse energy.…”

Section: Introductionmentioning

confidence: 99%

A diode‐pumped SnS₂ passively Q‐switched Tm‐doped pulsed laser

Shi

Sun

Xun

et al. 2022

Micro & Optical Tech Letters

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In this research, a diode-pumped SnS 2 passively Q-switched (PQS) V-type Tm-doped pulsed laser was demonstrated. The continuous-wave (CW) condition without SnS 2 saturable absorber (SA) was investigated first. A maximum output power of 1.26W with a slope efficiency of 24.28% was derived at an absorbed pump power of 7.11W under an output coupling of 5%. With the as-prepared SnS 2 SA employed, a series of stable Q-switched (QS) pulse trains were successfully realized. A minimum pulse width of 3.061 μs and a maximum repetition frequency of 70.42 kHz were generated through an output coupling of 5%, corresponding to a maximum output power of 621 mW. The delivered highest peak power and maximum single pulse energy were 2.90W and 12.41 μJ under an output coupling of 2.5%, respectively. These findings indicated that SnS 2 was a promising modulator for 2 μm all-solid-state pulsed laser generation.

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Passively Q-switched Tm:YAP laser based on SnS2 saturable absorber

Cited by 10 publications

References 49 publications

Operation of a passively Q‐switched Tm:YAP laser with Ta₂NiS₅ as a saturable absorber

Operation of a passively Q‐switched Tm:YAP laser with Ta₂NiS₅ as a saturable absorber

SnS2 as a Saturable Absorber for Mid-Infrared Q-Switched Er:SrF2 Laser

A diode‐pumped SnS₂ passively Q‐switched Tm‐doped pulsed laser

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Passively Q-switched Tm:YAP laser based on SnS2 saturable absorber

Cited by 10 publications

References 49 publications

Operation of a passively Q‐switched Tm:YAP laser with Ta2NiS5 as a saturable absorber

Operation of a passively Q‐switched Tm:YAP laser with Ta2NiS5 as a saturable absorber

SnS2 as a Saturable Absorber for Mid-Infrared Q-Switched Er:SrF2 Laser

A diode‐pumped SnS2 passively Q‐switched Tm‐doped pulsed laser

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Operation of a passively Q‐switched Tm:YAP laser with Ta₂NiS₅ as a saturable absorber

Operation of a passively Q‐switched Tm:YAP laser with Ta₂NiS₅ as a saturable absorber

A diode‐pumped SnS₂ passively Q‐switched Tm‐doped pulsed laser