Patent of Mr. Frederick Bartholomew Folsch, of Oxford Street, for Improvements on Instruments, and Pens to Facilitate Writing

Bartholomew, Frederick

doi:10.2307/30072521

Cited by 1 publication

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“…During the APCVD process, Si wafers (polished and textured) were placed on a continuously moving belt made of Ni alloy (Inconel 601) at the entry port and horizontally transported through preheating zones and then CVD deposition chambers. For the PSG layer deposition, N 2 diluted SiH 4 , PH 3 and O 2 were introduced through one of the CVD injectors with pure N 2 gas flowing in between to impede the homogeneous gas reaction (nitrogen curtain) [13,14]. The 65 -70 nm PSG layers were deposited with varying concentration levels of P, a step easily realized by simply changing the PH 3 flow rate.…”

Section: Introductionmentioning

confidence: 99%

Improved control of the phosphorous surface concentration during in‐line diffusion of c‐Si solar cells by APCVD

Davis

Jiang

Demberger

et al. 2013

Physica Rapid Research Ltrs

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Emitter formation for industrial crystalline silicon (c‐Si) solar cells is demonstrated by the deposition of phosphorous‐doped silicate glasses (PSG) on p‐type monocrystalline silicon wafers via in‐line atmospheric pressure chemical vapor deposition (APCVD) and subsequent thermal diffusion. Processed wafers with and without the PSG layers have been analysed by SIMS measurements to investigate the depth profiles of the resultant phosphorous emitters. Subsequently, complete solar cells were fabricated using the phosphorous emitters formed by doped silicate glasses to determine the impact of this high‐throughput doping method on cell performance. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%