Path towards a vertical TFET enabled by atomic precision advanced manufacturing.

Lu, Tzu-Ming; Gao, Xujiao; Anderson, Evan J.; Granado, Juan Pedro Mendez; Campbell, DeAnna; Ivie, Jeffrey A.; Schmucker, Scott W.; Lu, Peixiang; Tracy, Lisa A; Arghavani, Reza; Misra, Sanjay

doi:10.2172/1872185

Cited by 2 publications

(1 citation statement)

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“…Doped features can be positioned, arrayed, coupled, and gated with atomic precision to form tunnel junctions 14 , single-atom transistors 12 , and a host of other possibilities, all compatible with nearstandard CMOS manufacturing 6,7,15 . This gives us an exciting tool to explore far-reaching ideas, such as quantum computing 8 , quantum simulation 16 , and digital electronics that incorporate controlled quantum effects into Si foundry-compatible platforms [6][7][8]17,18 .…”

Section: Introductionmentioning

confidence: 99%

Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy

Basso¹,

Kehayias²,

Henshaw³

et al. 2022

Preprint

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The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we performed nitrogen-vacancy (NV) wide-field magnetic imaging of stray magnetic fields from surface current densities flowing in an APAM test device over a mmfield of view with µm-resolution. To do this, we integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current density, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ∼0.03 A/m, corresponding to a smallest detectable current in the 200 µm-wide APAM ribbon of ∼6 µA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.

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