2018
DOI: 10.1364/oe.26.00a341
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Paths to light trapping in thin film GaAs solar cells

Abstract: It is now well established that light trapping is an essential element of thin film solar cell design. Numerous light trapping geometries have already been applied to thin film cells, especially to silicon-based devices. Less attention has been paid to light trapping in GaAs thin film cells, mainly because light trapping is considered less attractive due to the material's direct bandgap and the fact that GaAs suffers from strong surface recombination, which particularly affects etched nanostructures. Here, we … Show more

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Cited by 26 publications
(11 citation statements)
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“…Therefore, the QR PCs obtain higher performance than the PC counterparts. In contrast, the literature founds less benefits for the GaAs, 20 as the thickness where light trapping could be very beneficial are few hundred nm with a few guided modes available. Furthermore, the proximity of the silver mirror to the ultrathin nanostructured layer creates parasitic absorption in the metal, if it is not mitigated with a dielectric spacer.…”
Section: B Absorption and Photocurrent Analysismentioning
confidence: 95%
See 2 more Smart Citations
“…Therefore, the QR PCs obtain higher performance than the PC counterparts. In contrast, the literature founds less benefits for the GaAs, 20 as the thickness where light trapping could be very beneficial are few hundred nm with a few guided modes available. Furthermore, the proximity of the silver mirror to the ultrathin nanostructured layer creates parasitic absorption in the metal, if it is not mitigated with a dielectric spacer.…”
Section: B Absorption and Photocurrent Analysismentioning
confidence: 95%
“…The use of QR PCs has been proposed for Si cells 12,33 and for thin GaAs cells 20 . Si benefits from a thicker substrate (microns instead of hundreds of nm) allowing the light to couple to more guided modes.…”
Section: B Absorption and Photocurrent Analysismentioning
confidence: 99%
See 1 more Smart Citation
“…Since the photovoltaic effect was found, the semiconductor solar cells (SCs) have been widely used [3], [4]. With the efforts of scientists and engineers, the photoelectric conversion efficiency (PCE) of SC has progressed a lot [5]- [11]. The PCE of six-junction SCs has reached 47.1% [12].…”
Section: Introductionmentioning
confidence: 99%
“…However, decreasing thickness leads to lower red-NIR absorption, as this radiation has higher penetration depth. Therefore, different light-trapping (LT) methods have been studied to improve this low-energy absorption, such as the use of metallic or dielectric nanoparticles, [41][42][43] front or rear texturing of the cell 6,44,45 and the use of high index dielectric structures on the cell front. 7,46,47 This latter LT method, operating in the regime of wave-optics, is the one considered in this work.…”
Section: Introductionmentioning
confidence: 99%