Pattern formation in Pt-SiC diffusion couples

Rijnders, M.R.; Kodentsov, AA Alexander; Beek, J. A. Van; Akker, Jan van den; Loo, F.J.J. van

doi:10.1016/s0167-2738(96)00578-4

Cited by 46 publications

(26 citation statements)

References 11 publications

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“…However, no data are currently known to the authors about this problem. Nevertheless, studies of diffusion couples of the system Pt-SiC have shown the mobility of Si in Pt 2 Si to be somewhat higher than that of Pt [40]. Moreover, the carbon product of the reaction between SiC and Pt has been considered to be non-diffusing by assuming an uniform carbon activity of 1.…”

Section: Graphitisation Mechanismsmentioning

confidence: 99%

Platinum-enhanced graphitisation in sandwich structures of silicon carbide and borosilicate glass

Hähnel

Woltersdorf

2004

Materials Chemistry and Physics

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Heat-treated sandwich structures of borosilicate glass and 6H-SiC single crystals (with and without platinum pre-coating) were used as model composites to study the reaction kinetics of the interlayer formation in the system Si-C-O. High resolution and analytical electron microscopical methods revealed a complex interlayer system, mainly consisting of different phases of carbon and silica. A distinct increase in the degree of graphitisation and texturisation of the reaction layer was observed after Pt deposition on the silicon carbide surface, which is attributed to the graphitising effect of both platinum and platinum silicide.

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Section: Graphitisation Mechanismsmentioning

confidence: 99%

Platinum-enhanced graphitisation in sandwich structures of silicon carbide and borosilicate glass

Hähnel

Woltersdorf

2004

Materials Chemistry and Physics

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“…In early ‘80 s, Osinski et al discovered the formation of periodic patterns in solid state 21 . In the past few decades, the formation of alternating layers in solid state in several systems, including Ag-Ti/Si 22 , Co-Si/Zn 23 24 , Fe-Si/Zn 21 24 , Ga-As/Co 25 , Ni-Co-Fe (or Ni-Co)/Mg 26 , Ni-Si/Zn 27 , SiC/Pt 28 , SiC/Ni 29 , SiC/Pd 29 , SiO 2 /Mg 30 31 , Sn-Cu/Ni-V 32 , U-Mo/Al 33 , Ni-W/Al 34 , Ni-Cr/Sn 35 , and Zn/Cu-Ti 36 has been reported upon. Although there were many mechanisms which had been proposed for particular cases, the origin of the formation of alternating layers is controversial.…”

Section: Discussionmentioning

confidence: 99%

Formation of alternating interfacial layers in Au-12Ge/Ni joints

Lin

Tsai

et al. 2014

Sci Rep

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Au-Ge alloys are promising materials for high-power and high-frequency packaging, and Ni is frequently used as diffusion barriers. This study investigates interfacial reactions in Au-12Ge/Ni joints at 300°C and 400°C. For the reactions at 300°C, typical interfacial morphology was observed and the diffusion path was (Au) + (Ge)/NiGe/Ni5Ge3/Ni. However, an interesting phenomenon – the formation of (Au,Ni,Ge)/NiGe alternating layers – was observed for the reactions at 400°C. The diffusion path across the interface was liquid/(Au,Ni,Ge)/NiGe/···/(Au,Ni,Ge)/NiGe/Ni2Ge/Ni. The periodic thermodynamic instability at the NiGe/Ni2Ge interface caused the subsequent nucleation of new (Au,Ni,Ge)/NiGe pairs. The thermodynamic foundation and mechanism of formation of the alternating layers are elaborated in this paper.

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“…[32][33][34][35][36][37][38][39][40] The Sn/Ni-7wt.%V couple is the only solder couple that displays the alternating layer phenomenon. The fast diffusion of tin into the Ni-V substrate results in the formation of the T phase.…”

Section: Solid-state Amorphization and Alternating Layer Formationmentioning

confidence: 99%