Patterned substrate epitaxy surface shapes

Jones, Stephen H.; Seidel, Lisa K.; Lau, Kei May; Harold, Michael P.

doi:10.1016/0022-0248(91)90355-9

Cited by 73 publications

(18 citation statements)

References 39 publications

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“…They showed that (3 À 1 1) facets, tilted at $ 251 to (1 0 0), appeared between very slow growing (1 1 1) facets and (1 0 0). We believe our situation is similar to that analyzed by Jones et al [19]. The incorporation rates of growth species depend on the facet orientation due to different atomic arrangements.…”

Section: Layerssupporting

confidence: 64%

“…The appearance of such new facets can also be predicted by kinetic Wulff constructions used to predict epitaxial shapes on non-planar surfaces. Jones et al [19] used Wulff constructions for structures at various orientations grown by atmospheric MOCVD at 750 1C. They showed that (3 À 1 1) facets, tilted at $ 251 to (1 0 0), appeared between very slow growing (1 1 1) facets and (1 0 0).…”

Section: Layersmentioning

confidence: 98%

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Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape

Šoltýs

Kúdela

Kučera

et al. 2011

Journal of Crystal Growth

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Section: Layerssupporting

confidence: 64%

Section: Layersmentioning

confidence: 98%

Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape

Šoltýs

Kúdela

Kučera

et al. 2011

Journal of Crystal Growth

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“…8,[11][12][13] and techniques to predict the shapes of epitaxial layers grown on patterned substrates have been introduced (Wulff construction). 14 The effect of the substrate orientation upon the lateral growth rate at mesa sidewalls has been observed earlier, 15 and it has also been reported that ridge formation at window edges occurred during selective infill growth on misoriented (100) substrates while smooth edges were present when using on-axis substrates. 16 However, it appears that no systematic study on the effect of substrate orientation upon lateral epitaxial growth at mesa sidewalls has been done to date.…”

Section: Introductionmentioning

confidence: 81%

Effects of substrate orientation and surface reconstruction on patterned substrate OMVPE of GaAs

Reichert

Cohen

2000

Journal of Elec Materi

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Organometallic vapor phase epitaxial growth of GaAs on 320 nm high mesas was used to study the dependence of lateral growth upon the substrate misorientation from (100) and the mesa wall orientation on the substrate. GaAs (100) substrates were misoriented by 3° toward eight major crystallographic directions, consisting of the four nearest [111] and [110] directions. The mesa sidewalls were oriented either parallel to the <011> and <01 -1> directions or rotated by 45° to be parallel to the <001> and <010> directions. GaAs films were grown with TMGa and TBA at T = 575°C. The lateral growth rates were up to 25 times higher than the vertical growth rate of 1.3 µm/hour. Optical microscopy and atomic force microscopy (AFM) showed that under the given growth conditions lateral growth off mesa sidewalls is most rapid in the <011> and/or <0 -1 -1> directions and less in the perpendicular <01 -1> and <0 -11> directions (lateral growth anisotropy). By raising the temperature to 625°C lateral growth in the <01 -1> -<0 -11> directions increased while it remained almost constant in the <011> -<0 -1 -1> directions. Published results show that the partial pressure of As also affects lateral growth. Differences in the lateral growth rates in the <011> and its opposite <0 -1 -1> directions result from substrate misorientation but not from the orientation of the mesa walls on the substrate. Anisotropic lateral growth rates in different crystallographic directions appear to be caused by both, (1) 1-dimensional Ga diffusion defined by surface reconstruction, and (2) a relatively low energy barrier to atoms flowing over high-to-low terrace steps. A lateral growth model is proposed that describes anisotropic lateral growth at mesa sidewalls in terms of growth conditions and substrate misorientations. The model also explains the difference in the preferential lateral growth directions between MBE and OMVPE.

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“…So the selective growth without mask would improve the crystalline quality. The mask width for the selective growth of semi-polar (11 0 1) GaN or (11 2 2) GaN on Si substrates is in the orders of 1 mm, which is much shorter than the diffusion length of source precursors [11][12][13][14]. In the metal organic vapor phase epitaxy (MOVPE), the diffusion length of ad-atoms is determined by the growth conditions depending on facets, and mass transport between facets takes place in cases.…”

Section: Introductionmentioning

confidence: 99%

Maskless selective growth of semi-polar (112¯2) GaN on Si (311) substrate by metal organic vapor phase epitaxy

Yang

Ahn

Tanikawa

et al. 2009

Journal of Crystal Growth

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Patterned substrate epitaxy surface shapes

Cited by 73 publications

References 39 publications

Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape

Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape

Effects of substrate orientation and surface reconstruction on patterned substrate OMVPE of GaAs

Maskless selective growth of semi-polar (112¯2) GaN on Si (311) substrate by metal organic vapor phase epitaxy

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