2011
DOI: 10.1002/adma.201100633
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Patterning Graphene with Zigzag Edges by Self‐Aligned Anisotropic Etching

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Cited by 178 publications
(153 citation statements)
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“…18,[20][21][22][23] Only the latter allows position control of the edges via a lithographic patterning process prior to the anisotropic etching. 18,[20][21][22] Quality demonstration of edges obtained by anisotropic etching has focused on Raman spectroscopy [18][19][20][21][22] and electron transport measurements of the ambipolar field effect. [20][21][22] The interpretation of Raman spectra acquired on crystallographically defined edges is based on the edge-orientation-sensitive elastic intervalley scattering of charge carriers between the K and K 0 valleys.…”
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confidence: 99%
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“…18,[20][21][22][23] Only the latter allows position control of the edges via a lithographic patterning process prior to the anisotropic etching. 18,[20][21][22] Quality demonstration of edges obtained by anisotropic etching has focused on Raman spectroscopy [18][19][20][21][22] and electron transport measurements of the ambipolar field effect. [20][21][22] The interpretation of Raman spectra acquired on crystallographically defined edges is based on the edge-orientation-sensitive elastic intervalley scattering of charge carriers between the K and K 0 valleys.…”
mentioning
confidence: 99%
“…18,[20][21][22] Quality demonstration of edges obtained by anisotropic etching has focused on Raman spectroscopy [18][19][20][21][22] and electron transport measurements of the ambipolar field effect. [20][21][22] The interpretation of Raman spectra acquired on crystallographically defined edges is based on the edge-orientation-sensitive elastic intervalley scattering of charge carriers between the K and K 0 valleys. Another way to probe intervalley scattering is electron transport measurements of the weak localization (WL) feature, 24 however, to this day, no experimental data have been reported on anisotropically etched graphene.…”
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confidence: 99%
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