We study a crystallographic etching process of graphene nanostructures where zigzag edges can be prepared selectively. The process involves heating exfoliated single-layer graphene samples with a predefined pattern of antidot arrays in an argon atmosphere at 820 • C, which selectively removes carbon atoms located on armchair sites. Atomic force microscopy and scanning electron microscopy cannot resolve the structure on the atomic scale. However, weak localization and Raman measurements -which both probe intervalley scattering at armchair edges -indicate that zigzag regions are enhanced compared to samples prepared with oxygen based reactive ion etching only.