2015
DOI: 10.1116/1.4934052
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Patterning of defect arrays with e-beam lithography used to develop a high throughput e-beam defect inspection tool

Abstract: SUNY Poly SEMATECH has established an infrastructure development program to ensure that needed beam based metrology tools and techniques are available for leading edge semiconductor processes and devices. The design, development, and fabrication of high quality dense array samples with ≤16 nm defects at known locations is a key requirement to assessing new inspection technologies. Due to the technical difficulties of creating high quality programmed defect samples at the required sizes, the authors have undert… Show more

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Cited by 6 publications
(2 citation statements)
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“…These objects could include dust on optical components inside the microscope or on the sample. Moreover, from the pseudo-phase, we can clearly observe some bright and some dark spots due to nanoscale defects on the sample [32], most of which are overwhelmed in the intensity image. To make a quantitative comparison between the intensity and pseudo-phase images, we define a fractional contrast C where S peak is the peak value of a local area in the image and S mean is the mean value of the entire image.…”
Section: Optical System Assessment and Nanoscale Defect Inspectionmentioning
confidence: 95%
“…These objects could include dust on optical components inside the microscope or on the sample. Moreover, from the pseudo-phase, we can clearly observe some bright and some dark spots due to nanoscale defects on the sample [32], most of which are overwhelmed in the intensity image. To make a quantitative comparison between the intensity and pseudo-phase images, we define a fractional contrast C where S peak is the peak value of a local area in the image and S mean is the mean value of the entire image.…”
Section: Optical System Assessment and Nanoscale Defect Inspectionmentioning
confidence: 95%
“…today's electronics industry. As an example, CNF was key to producing an intentional defect array (with programmed defects down to 5 nm in size) that was to be used for proving in new wafer inspection systems [21].…”
Section: The Expansion Into Interdisciplinary Researchmentioning
confidence: 99%