Patterning thick diffused junctions on CdTe

Kalliopuska, J.; Nenonen, S.; Sipilä, Heikki; Andersson, H.; Vähänen, Sami; Eränen, Simo; Tlustos, L.

doi:10.1016/j.nima.2009.03.132

Cited by 6 publications

(19 citation statements)

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“…CdTe diode detectors were used in this study due to their excellent energy and leakage current performance [8], [9], [12]. The CdTe diode detectors, typically, have an indium anode that forms a Schottky contact on the CdTe while the cathode is produced from gold or platinum giving an Ohmic contact.…”

Section: Edgeless Cadmium Telluride Detectorsmentioning

confidence: 99%

“…0018-9499/$31.00 © 2012 IEEE Rather than use standard photolithography, it is possible to segment the indium anode using a diamond blade. In this technique a physical cut through the indium diffused layer is used to pattern the electrode [8], [9]. This produces detectors with excellent leakage current performance, high inter-pixel resistance and an active area that extends to the detector edges.…”

Section: Edgeless Cadmium Telluride Detectorsmentioning

confidence: 99%

“…The detector was fabricated by Acrorad Ltd and segmented by VTT Technical Research Centre of Finland using the diamond blade segmentation technique [8]- [10]. The anode was segmented into 20 20 pixels with a pitch of .…”

Section: Experimental Arrangementmentioning

confidence: 99%

“…If tiled arrays are to provide efficient imaging, then the non-detecting area between detectors must be kept to a minimum and ideally be reduced to zero. One method of achieving this is the use of edgeless detectors which have no guard ring and where the active area extends right to the edge of the detector [8]- [10].…”

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confidence: 99%

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Characterization of Edgeless CdTe Detectors for use in Hard X-Ray Imaging Applications

Veale

Bell

Jones

et al. 2012

IEEE Trans. Nucl. Sci.

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Segmentation of the anode-side of a CdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless CdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.

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Section: Edgeless Cadmium Telluride Detectorsmentioning

confidence: 99%

Section: Edgeless Cadmium Telluride Detectorsmentioning

confidence: 99%

Section: Experimental Arrangementmentioning

confidence: 99%

mentioning

confidence: 99%

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Characterization of Edgeless CdTe Detectors for use in Hard X-Ray Imaging Applications

Veale

Bell

Jones

et al. 2012

IEEE Trans. Nucl. Sci.

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“…1. to obtain rectifying contact and lower leakage current levels than with the Schottky contacts, 2. to improve the spatial resolution by reading out the electrons instead of holes, 3. to improve the energy resolution by using the cathode-side as an entrance side for the radiation and read out of electrons, 4.…”

Section: Contentsmentioning

confidence: 99%

Pixelized M-π-n CdTe detector coupled to Medipix2 readout chip

Kalliopuska

Nenonen²,

Penttilä

et al. 2011

J. Inst.

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We have realized a simple method for patterning an M-π-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration. The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. The anode and cathode-sides of a 6 × 6 mm 2 diodes were patterned with a diamond blade and flip-chip bonded to the Medipix2 readout chips. First imaging results with an X-ray source show reduced polarization effect and edgeless detector behavior for the anode-side patterned detector.

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10 years of the Medipix2 Collaboration

Campbell

2011

Nuclear Instruments and Methods in Physics Research Section A:

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Patterning thick diffused junctions on CdTe

Cited by 6 publications

References 1 publication

Characterization of Edgeless CdTe Detectors for use in Hard X-Ray Imaging Applications

Characterization of Edgeless CdTe Detectors for use in Hard X-Ray Imaging Applications

Pixelized M-π-n CdTe detector coupled to Medipix2 readout chip

10 years of the Medipix2 Collaboration

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