Pd induced lateral crystallization of amorphous Si thin films

Lee, Seok‐Woon; Jeon, Yoo-Chan; Joo, Seung–Ki

doi:10.1063/1.113888

Cited by 182 publications

(78 citation statements)

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“…Pd is a fast interstitial diffuser and almost insoluble in crystalline Si. The solubility of fast diffusing species in amorphous Si is known to be higher than that in crystalline Si and very sensitive to the defect concentration [51]. Pd does not dissolve Ge, and the solubility of Pd in Ge has not been studied [52].…”

Section: Palladium Propertiesmentioning

confidence: 99%

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Thøgersen

Mayandi

Finstad

et al. 2008

Journal of Applied Physics

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The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 -70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm SiO2 layer made by Rapid Thermal Oxidation (RTO) of silicon. Nanocrystals precipitate when the excess silicon concentration exceeds 50 area %. Below this percentage amorphous silicon nanoclusters were found. In-situ heat treatment of the samples in the TEM showed that the crystallization requires a temperature above 800 o C. The nanocrystals precipitate in a 4 nm band, 5 nm from the Si substrate and 4 nm from the SiO2 sample surface. The silicon nucleates where the excess Si concentration is the highest. The top surface has less excess Si due to reaction with oxygen from the ambient during annealing. The SiO2-RTO layer is more Si rich due to Si diffusion from the SiO2-Si layer into RTO. Twinning and stacking faults were found in nanocrystals with 4-10 nm in diameter. These types of defects may have large effects upon the usability of the material in electronic devices. Both single and double twin boundaries have been found in the nanocrystals by high resolution transmission electron microscopy (HRTEM). Image simulations were carried out in order to obtain more information about the defects and nanocrystals. The stacking faults are extrinsic and located in the twin boundaries.

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Section: Palladium Propertiesmentioning

confidence: 99%

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Thøgersen

Mayandi

Finstad

et al. 2008

Journal of Applied Physics

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“…In particular, the LTPS technology has been advanced, based on various crystallization techniques: e.g., sold phase crystallization, excimer laser annealing, rapid thermal annealing, metalinduced crystallization, etc,. [6][7][8][9][10][11][12][13][14] The crystallization techniques can be adapted for activation of ion-doped Si thin films, by making the possibility through slight modifications in processing variables. Ion-doping process accompanies the activation of ions implanted into polycrystalline Si (p-Si) as n-type or p-type.…”

Section: -5)mentioning

confidence: 99%

Application of Modified Rapid Thermal Annealing to Doped Polycrystalline Si Thin Films Towards Low Temperature Si Transistors.

So¹,

Kim²,

Kim³

et al. 2008

Korean. J. Mater. Res.

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Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of B 2 H 6 . The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

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“…Having observed that in MILC by Pd, the rate changed inversely with the separation between the Pd pads, Lee et al [6] proposed that the MILC rate depended on the local Pd concentration. We have recently observed that in MILC by Ni [10], the rate decreased upon extended heat treatment.…”

mentioning

confidence: 99%

“…Recently, palladium (Pd) or nickel (Ni) [6], [7] was found to induce crystallization of -Si outside its coverage area. This phenomenon of metal induced "lateral" crystallization, or MILC for short, has been found to produce polycrystalline silicon thin films largely free of metal contamination, with better crystallinity than those produced by SPC, and resulting in better performing thin film transistors [8], [9].…”

mentioning

confidence: 99%

The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films

Jin

Moulding

Kwok

et al. 1999

IEEE Trans. Electron Devices

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Abstract-The effects of extended heat treatment on the rate of metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) were investigated. Orientation image microscopy and transmission electron microscopy were employed to reveal the crystallinity of the thin film and to measure the MILC length. It was found that for circular Ni disc patterns, the radial dimensions of the resulting MILC rings increased with the radii of the Ni discs. The longest MILC lengths were obtained from straight-edged Ni patterns, which effectively had infinite radii of curvature. The MILC rate decreased upon extended heat treatment. One reason is the continuously changing state of the a-Si during the treatment. An additional reason could be the diminishing supply of Ni from the Ni covered area. The contribution of both to the reduction of the MILC rate is discussed.

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Pd induced lateral crystallization of amorphous Si thin films

Cited by 182 publications

References 0 publications

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Application of Modified Rapid Thermal Annealing to Doped Polycrystalline Si Thin Films Towards Low Temperature Si Transistors.

The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films

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