2019
DOI: 10.1016/j.susc.2018.08.022
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Pd model catalysts on clean and modified HOPG: Growth, adsorption properties, and stability

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Cited by 23 publications
(36 citation statements)
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“…The sample was annealed at 800 K for 3 min in UHV to remove residual gases. The HOPG sample was bombarded with Ar + (0.5 keV, 300 K, 60 min, 8 × 10 –5 mbar) to create the nucleation sites necessary for the growth of Pd NPs. , Pd was deposited from a wire (Alfa Aesar, 99.9% metals basis, d = 1 mm) loaded into a commercial electron beam evaporator (Focus EFM3). The deposition of Pd for 36 min (flux of 3 nA) at a sample temperature of 300 K led to the formation of a Pd film with an equivalent thickness of 15 Å, which was calibrated by a quartz crystal microbalance.…”
Section: Methodsmentioning
confidence: 99%
“…The sample was annealed at 800 K for 3 min in UHV to remove residual gases. The HOPG sample was bombarded with Ar + (0.5 keV, 300 K, 60 min, 8 × 10 –5 mbar) to create the nucleation sites necessary for the growth of Pd NPs. , Pd was deposited from a wire (Alfa Aesar, 99.9% metals basis, d = 1 mm) loaded into a commercial electron beam evaporator (Focus EFM3). The deposition of Pd for 36 min (flux of 3 nA) at a sample temperature of 300 K led to the formation of a Pd film with an equivalent thickness of 15 Å, which was calibrated by a quartz crystal microbalance.…”
Section: Methodsmentioning
confidence: 99%
“…Subsequently, the sample was annealed at 800 K for 3 min in UHV. The HOPG samples were bombarded with Ar + (Linde 6.0, 500 eV, 60 min, ∼3.0 μA/cm 2 ) at a sample temperature of 300 K to create nucleation centers for the growth of Pt NPs . Pt was deposited from a wire (Alfa Aesar, 99.95% purity, 1 mm in diameter) using a commercial electron beam evaporator (Focus EFM3).…”
Section: Methodsmentioning
confidence: 99%
“…The HOPG samples were bombarded with Ar + (Linde 6.0, 500 eV, 60 min, ∼3.0 μA/cm 2 ) at a sample temperature of 300 K to create nucleation centers for the growth of Pt NPs. 83 Pt was deposited from a wire (Alfa Aesar, 99.95% purity, 1 mm in diameter) using a commercial electron beam evaporator (Focus EFM3). After the deposition of Pt for 45 min at a flux of 17 nA and a sample temperature of 300 K, we obtained a Pt film with an equivalent thickness of 15 Å as determined by a quartz crystal microbalance.…”
Section: Methodsmentioning
confidence: 99%
“…19,25,26 The consequences of such modification by Ar + or O + bombardment were described in our previous publication. 22 Here, we prepared Pt−Ga SCALMS-like model systems by physical vapor deposition (PVD) of Ga and Pt onto HOPG modified by Ar + bombardment. The Pt−Ga system has been studied in the past with respect to formation of various intermetallic compounds (IMCs).…”
Section: Introductionmentioning
confidence: 99%