Pd/Porous GaAs in the Manufacture of Schottky Diodes

Оксанич, А. П.; Pritchin, S.E.; Kogdas, M.G.; Kholod, A.G.; Dernova, M.G.

doi:10.1109/mees.2019.8896603

Cited by 11 publications

(1 citation statement)

References 16 publications

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“…В даний час завдання автоматизації вимірювання окремих електрофізичних параметрів монокристалічного кремнію досить успішно вирішено. Існує досить широкий спектр методів [6,7] та обладнання [8] 2) повинна забезпечувати введення даних в наступних режимах: вручну з робочих місць оператора або технолога; з автоматизованих пристроїв вимірювання шляхом перетворення аналогових сигналів в цифрові з подальшою передачею цієї інформації в систему; з автоматичних засобів вимірювання;…”

Section: система автоматического управленияunclassified

System of Automatic Control of Measurement of Industrial Controlled Parameters of Silicon for Porous Substrates

Pritchin¹,

Dragobetsky²,

Шевченко³

et al. 2021

EES

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Purpose. Certification of silicon ingots intended for the manufacture of porous silicon substrates, which includes many operations for measuring silicon parameters. Some measurement operations are automated and some are not automated. The aim of the work is to fully automate the process of creating a quality certificate for monocrystalline silicon by developing an automatic control system for measuring controlled silicon parameters for porous linings. Methodology. We have performed an analysis of existing methods and methods of industrially controlled parameters of silicon. We have performed the analysis of standards for the measurement of parameters and the measurement process in the factory. Results. In this work, the authors performed the classification of industrially controlled parameters in accordance with the methods and measurement equipment. On the basis of the obtained analysis, the authors developed a scheme of the procedure for performing the operations of measuring the parameters of monocrystalline silicon. The authors proposed a block diagram of an automatic control system for measuring industrially controlled parameters of silicon. All equipment included in the sites is integrated into an industrial local area network, which is controlled by an industrial controller. The work shows the system software developed by the authors, developed in the LabView environment. The program allows you to generate a quality certificate for a monocrystalline silicon ingot for porous substrates, to analyze data for a selected period of time. Originality. For the first time, a classification of methods and means of measured parameters of monocrystalline silicon was carried out according to the criterion of measurement automation. The scheme of the order of performing of measurement operations has been improved in order to optimize it for automating the generation of a quality certificate. Practical value. The proposed automatic control system for measuring industrially controlled parameters of silicon is used at the plant “Pure Metals” that produces ingots of monocrystalline silicon. It can be used in factories where product quality certificates are used based on the measurement of many parameters. Figures 3, tables 1, references 11.

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Section: система автоматического управленияunclassified