PdSe2/MoSe2 vertical heterojunction for self-powered photodetector with high performance

Zhong, Jiahong; Wu, Biao; Madoune, Yassine; Wang, Yunpeng; Liu, Zongwen; Liu, Yanping

doi:10.1007/s12274-021-3745-9

Cited by 69 publications

(45 citation statements)

References 41 publications

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“…However, photodetectors motivated by photoconductive mechanism have a long response/recovery time in the millisecond scale and require external bias. , At the same time, the heterojunction photodetectors have been developed to realize high-speed photoresponse and self-driven photodetection due to their built-in electric field and band engineering. − For example, the GaSe/MoS 2 and GaSe/WS 2 heterojunction photodetectors have been designed and fabricated with responsivities of 0.67 and 0.9 A W –1 . , Moreover, photodetectors based on heterojunctions combine with the three-dimensional (3D) materials’ advantages of mature process, low cost, and stability. − Usually 2D/3D heterojunctions are fabricated by depositing the 2D materials onto 3D substrate via magnetron sputtering or molecular beam epitaxy, , whereas these methods limit the choice of component materials due to the requirements of the lattice matching between 2D materials and 3D substrates. Stacking 2D materials onto the 3D substrates directly without the aforementioned limitations offers a facile approach to construct high-performance devices.…”

Section: Introductionmentioning

confidence: 99%

Highly Sensitive Photodetector Based on the n-Si/p-GaSe Vertical Heterojunction

Liu

et al. 2022

ACS Appl. Nano Mater.

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Photodetectors based on two-dimensional materials and their van der Waals (vdW) heterojunctions usually have excellent optoelectronic performance and great potential applications. Herein, gallium (Aladdin, particles, 99.999% trace metal basis), selenium (Aladdin, powder, 99.999% trace metal basis), and iodine (Alfa Aesar, 99.999% trace metal basis) are the raw materials for the growth of gallium selenide (GaSe) single crystals by the chemical vapor transport method, in which iodine is the transport agent. Subsequently, GaSe nanoflakes are exfoliated from the grown bulk GaSe crystals by mechanical exfoliation. The n-Si/p-GaSe van der Waals vertical heterojunctions have been designed and fabricated for photodetection, which show good characteristics including a high responsivity of 1.74 A/W and a fast response/recovery time of 48 μs/88 μs under zero bias owing to their type-II band structure and built-in electric field. The results indicate that n-Si/p-GaSe vdW vertical heterojunctions are promising candidates in future ultrafast optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Highly Sensitive Photodetector Based on the n-Si/p-GaSe Vertical Heterojunction

Liu

et al. 2022

ACS Appl. Nano Mater.

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“…inspiringly discovers that in‐plane inversion symmetry can be broken in WSe 2 /BP heterointerface, resulting in a spontaneous photovoltaic effect. [ 1 ] Although many novel physical properties have occurred in isotropic/anisotropic heterostructure, [ 1,14,15 ] the regulation of structural symmetry in highly symmetric materials has not been reported.…”

Section: Introductionmentioning

confidence: 99%

Symmetry Engineering Induced In‐Plane Polarization in MoS₂ through Van der Waals Interlayer Coupling

Zheng

Wei

Zhang

et al. 2022

Adv Funct Materials

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2D materials with low-symmetry exhibit anisotropic physical properties, making them promising candidates for various applications. However, the lack of matured synthesis methods in anisotropic 2D materials is still the main obstacle to their future applications. Given the mature synthesis method of transition metal dichalcogenides (TMDCs), manipulating anisotropy in 2D TMDCs becomes a promising way to tune or trigger functional properties. Herein, for the first time, a van der Waals symmetry engineering is reported to introduce in-plane polarization in MoS 2 through contact with low-symmetric CrOCl. The emergence of asymmetric second harmonic generation pattern in MoS 2 /CrOCl heterojunction indicates the variation of lattice symmetry in MoS 2 . Furthermore, the theoretical simulation shows that such change stems from lattice-mismatch-induced uniaxial strain because of the strong interlayer interactions. The angle-dependent Raman and photoluminescence spectra further identify that the uniaxial strain gives rise to the in-plane polarization in MoS 2 . In addition, the polarized MoS 2 exhibits excellent orientation-sensitive electrical characteristics with a conductance anisotropy ratio of ≈1.5. More importantly, the strong linear polarization-sensitive photodetection is realized, and the anisotropic ratio reached 1.25 with 532 nm. The results suggest that symmetric engineering potentially opens up a new field to endow high-symmetry 2D materials with anisotropic functionalities.

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“…17 Zhong et al designed a high-performance self-powered photodetector based on PdSe 2 /MoSe 2 vertical heterojunction. 18 Niu et al reported a self-powered gas sensor based on the MoS 2 /GaSe heterojunction for ppb-level NO 2 sensing at RT. 19 However, the above 2D vdWs heterostructures are mainly exfoliated from their bulk counterparts by various techniques, which possess excellent properties but are not conducive to industrial production.…”

Section: Introductionmentioning

confidence: 99%

UV-light-assisted gas sensor based on PdSe₂/InSe heterojunction for ppb-level NO₂ sensing at room temperature

Fan

Qin

et al. 2022

Nanoscale

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PdSe2/MoSe2 vertical heterojunction for self-powered photodetector with high performance

Cited by 69 publications

References 41 publications

Highly Sensitive Photodetector Based on the n-Si/p-GaSe Vertical Heterojunction

Highly Sensitive Photodetector Based on the n-Si/p-GaSe Vertical Heterojunction

Symmetry Engineering Induced In‐Plane Polarization in MoS₂ through Van der Waals Interlayer Coupling

UV-light-assisted gas sensor based on PdSe₂/InSe heterojunction for ppb-level NO₂ sensing at room temperature

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PdSe2/MoSe2 vertical heterojunction for self-powered photodetector with high performance

Cited by 69 publications

References 41 publications

Highly Sensitive Photodetector Based on the n-Si/p-GaSe Vertical Heterojunction

Highly Sensitive Photodetector Based on the n-Si/p-GaSe Vertical Heterojunction

Symmetry Engineering Induced In‐Plane Polarization in MoS2 through Van der Waals Interlayer Coupling

UV-light-assisted gas sensor based on PdSe2/InSe heterojunction for ppb-level NO2 sensing at room temperature

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About

Symmetry Engineering Induced In‐Plane Polarization in MoS₂ through Van der Waals Interlayer Coupling

UV-light-assisted gas sensor based on PdSe₂/InSe heterojunction for ppb-level NO₂ sensing at room temperature