Peak-to-valley current ratios as high as 50:1 at room temperature in pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes

Smet, J. H.; Broekaert, T.P.E.; Fonstad, Clifton G.

doi:10.1063/1.351085

Cited by 67 publications

(20 citation statements)

References 7 publications

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“…The performance exceeds that observed in typical solid state quantum well resonant tunneling heterostructures. [13][14][15] The intrinsic PVR of the molecule may be considerably greater than that reported here, because the valley currents observed ͑on the order of picoamperes͒ are comparable to typical leakage currents in the silicon nitride. The devices are stable for more than one year in ambient conditions.…”

Section: -5mentioning

confidence: 64%

Room-temperature negative differential resistance in nanoscale molecular junctions

Chen¹,

Wang²,

Reed³

et al. 2000

Applied Physics Letters

507

394

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Molecular devices are reported utilizing active self-assembled monolayers containing the nitroamine [2′-amino-4,4′-di(ethynylphenyl)-5′-nitro-1-benzenethiolate] or the nitro compound [4,4′-di(ethynylphenyl)-2′-nitro-1-benzenethiolate] as the active components. Both of these compounds have active redox centers. Current–voltage measurements of the devices exhibited negative differential resistance at room temperature and an on–off peak-to-valley ratio in excess of 1000:1 at low temperature.

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Section: -5mentioning

confidence: 64%

Room-temperature negative differential resistance in nanoscale molecular junctions

Chen¹,

Wang²,

Reed³

et al. 2000

Applied Physics Letters

507

394

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“…5; for a given device, small fluctuations ($1% in voltage peak position and $6% in peak current) are observed with consecutive positive and negative sweeps but could be attributed to temperature fluctuations of $2 K (within the experimental thermal stability). The performance exceeds that observed in typical solid state quantum well resonant tunneling heterostructures [26][27][28][29]. In addition to the obvious size advantages for scaling, the intrinsic device characteristics (that is, the valley current shutoff) may be superior to that of solid state devices.…”

Section: Ndr In Molecular Junctionsmentioning

confidence: 71%

Electronic transport of molecular systems

2002

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We report stable and reproducible switching and memory effects in self-assembled monolayers (SAMs). We demonstrate realization of negative differential resistance (NDR) and charge storage in electronic devices that utilize single redox-center-contained SAM as the active component; and compare the effects of various redox centers to switching and storage behavior. The devices exhibit electronically programmable and erasable memory bits with bit retention times greater than 15 min at room temperature. Ó

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“…GaAs-based double-barrier RTDs demonstrate unique quantum mechanical tunnelling through quantum-size levels with a high peak-to-valley ratio of the negative differential resistance (NDR) region in I-V characteristics measured at room temperature [2]. Despite successful high-frequency operation at 712 GHz of the AlGaAs/GaAs RTD, the output power levels of such devices are limited by a few microwatts [3].…”

Section: Introductionmentioning

confidence: 99%

Capacitance characterization of AlN/GaN double‐barrier resonant tunnelling diodes

Kurakin¹,

Vitusevich

Danylyuk

et al. 2006

Phys. Status Solidi (c)

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We report on the electrical characterization of AlN/GaN/AlN double-barrier resonant tunnelling diodes (RTDs) using steady-state current-voltage and capacitance-voltage (C-V) characteristics in a wide frequency range with 2 kHz steps. The C-V characteristics of a double-barrier RTD show different behaviour under forward and reverse polarities and a strong dependence on frequency. The monotonous growth of capacitance at forward bias was registered, while a more complicated dependence was observed at reverse voltages. In order to analyse this dependence, a self-consistent calculation of the potential profile of the structure was performed taking into account polarization effects at the AlN/GaN interfaces. The peculiarities are analysed in the model of possible charge trapping at the interface states.

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Peak-to-valley current ratios as high as 50:1 at room temperature in pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes

Cited by 67 publications

References 7 publications

Room-temperature negative differential resistance in nanoscale molecular junctions

Room-temperature negative differential resistance in nanoscale molecular junctions

Electronic transport of molecular systems

Capacitance characterization of AlN/GaN double‐barrier resonant tunnelling diodes

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