Pecularities of EPR spectra of the Gd impurity in the Sn-Rich Pb1−x Sn x Te(Gd) solid solutions

Abstract

An electron paramagnetic resonance (EPR) experimental study of crystalline and powder p-Pb~_~_ySnyGdyTe samples for various matrix composition x and Gd content y has been carried out. The study reveals that grinding the crystals into powder as well as their low-temperature annealing turns Gd impurity ions from the EPR-silent Gd 2 § state to the EPR-active Gd 3 § state, whereas high -~ temperature annealing in vacuum quenches EPR signals from Gd 3 § ions. The experimental results are interpreted in terms of a model assuming that the trivalent charge state of the Gd impurity ions in lead and tin tellurides is a component part of the "substituting Gd impurity-Te vacancy" eomplex.

Magnetic susceptibility of the rare earth element impurities in the IV–VI semiconductors and Curie–Weiss law

“…The idea of the experiment was as follows. If PbTe is doped with Gd during the process of growing, the Gd impurity mainly concentrates in the initial part of the ingot [12]. On the other hand, gadolinium as a representative of REE effectively getters different impurities, especially oxygen [13].…”

High temperature transformation in the defects and impurities system of PbTe:Eu crystals

“…Their effect on electrical [9,10], optical [11], magnetic [10,12], resonance [12,13] properties, as well as the interaction of impurities with native defects of a crystal matrix during the growth of doped crystals is investigated [14,15]. At the same time the problem of interaction between REE impurities and native defects in doped IV-VI crystals during annealing process has not been investigated.…”

“…The behavior of REE impurities in IV-VI semiconductors has been widely researched too [9][10][11][12][13][14][15]. Their effect on electrical [9,10], optical [11], magnetic [10,12], resonance [12,13] properties, as well as the interaction of impurities with native defects of a crystal matrix during the growth of doped crystals is investigated [14,15].…”

Segregation of the Eu impurity as function of its concentration in the melt for growing of the lead telluride doped crystals by the Bridgman method

“…Usually they contain also the pairs and triplets of the impurities as well as more complicated formations [7][8][9], and the complexes of the REE with Oxygen [10,11]. Moreover the rare earth impurities are strongly non-uniformly distributed along the doped crystals during their growth from melt [12][13][14]. In this article we present the results of investigation of the Eu impurity segregation during growth of the lead telluride doped crystals from melt by the Bridgman method as function of initial Europium concentration in the melt.…”