2008
DOI: 10.1088/1742-6596/97/1/012022
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Peculiarities of high-pressure and hot-pressing manufacture of MgB2-based blocks with high critical currents for electrical machines

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Cited by 11 publications
(11 citation statements)
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“…Prikhna et al [17] reported at 10 K a value of B(10 4 ) = 7.8 T for bulk MgB 2 with 10% Ti additive after reaction at 800 • C under a pressure of 2 GPa. Serquis et al [18] reacted in situ wires under HIP conditions (0.2 GPa) and reported at 4.2 K an enhancement of B(10 4 ) up to 1 T. Cold high pressure densification (CHPD) [19] is presented here as an alternative to the just mentioned high temperature treatments.…”
Section: Introductionmentioning
confidence: 99%
“…Prikhna et al [17] reported at 10 K a value of B(10 4 ) = 7.8 T for bulk MgB 2 with 10% Ti additive after reaction at 800 • C under a pressure of 2 GPa. Serquis et al [18] reacted in situ wires under HIP conditions (0.2 GPa) and reported at 4.2 K an enhancement of B(10 4 ) up to 1 T. Cold high pressure densification (CHPD) [19] is presented here as an alternative to the just mentioned high temperature treatments.…”
Section: Introductionmentioning
confidence: 99%
“…There are no precise data about the mass density of the reacted MgB 2 layer in IMD processed wires, but very high Vickers microhardness values were reported, of the order of 1300 kg/mm 2 [19]. For comparison, the Vickers microhardness values for bulk samples obtained by high temperature/high pressure treatments are somewhat higher (up to 1500 kg/mm 2 ) [21], thus suggesting a very high mass density (relative mass density > 90%) in IMD filaments, thus confirming the values of Giunchi et al [22]. The value of J c in the reacted MgB 2 layer of IMD wires is higher than for ex situ and in situ wires: J c (4.2K) at 12 T was reported at 4.5 x 10 4 A/cm 2 [19].…”
Section: Mass Densities Fill Factors and J C In Various Mgb 2 Wire Tmentioning
confidence: 99%
“…In view of the enhancement of the mass density of MgB 2 bulk samples and in situ filamentary tapes, numerous high temperature/high pressure attempts have been undertaken [21,23]. Recently, a new kind of treatment was introduced at GAP in Geneva, the Cold High Pressure Densification or CHPD technique [1].…”
Section: Cold High Pressure Densification (Chpd) Of Short Mgb 2 Wiresmentioning
confidence: 99%
“…The higher is the amount of these inclusions, the finer they are, and more homogeneously distributed, the higher is the [10]. Up to now our attempts to improve of HP-HT-synthesized by adding SiC with grains of sizes 20-30 and 200-400 nm were unsuccessful: at 10-35 K decreased or remained unchanged [11].…”
Section: Introductionmentioning
confidence: 99%
“…In the experiments on sintering of Type I-H.S. Starck, 0.8% O, 10 and Type II-Alfa Aesar, 98% purity were used. A powder of Ti (30 , purity 95%), Ta (0.…”
Section: Introductionmentioning
confidence: 99%