Peculiarities of migration-enhanced-epitaxy (MEE) versus molecular beam epitaxy (MBE) growth kinetics of CdSe fractional monolayers in ZnSe

Sorokin, Sergey; Shubina, T. V.; Торопов, А. А.; Sedova, I. V.; Ситникова, А. А.; Zolotareva, R. V.; Иванов, С. В.; Kop’ev, P. S.

doi:10.1016/s0022-0248(98)01376-1

Cited by 31 publications

(17 citation statements)

References 8 publications

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“…As a result, the regions of nanometer size appear in the QW, in which the content of the narrow-gap solution component essentially exceeds the average value in QW. Depending on the growth conditions and/or post-growth treatment these regions can have the form of planar islands (called also 2D discs), [1][2][3][4] or 3D dot-like structures (see, for example, Ref. 5) or both.…”

Section: Introductionmentioning

confidence: 99%

“…The main experimental results for these systems obtained by different research groups are in fairly good agreement. [1][2][3][4][5][6] Since most epitaxial growth techniques are essentially of the nonequilibrium type, the structural characteristics of QWs in particular cases strongly depend on the growth conditions. We studied the epitaxial samples grown by (i) the MBE technique with a CdS compound as a Cd source and an elemental Se source, 1 (ii) conventional MBE, 2 and (iii) by multi-cycle migration enhanced epitaxy deposition of CdSe (with less than 0.5 ML per cycle) in ZnSe matrices with the different growth interruption times after each Cd and Se pulses.…”

Section: Introductionmentioning

confidence: 99%

“…We studied the epitaxial samples grown by (i) the MBE technique with a CdS compound as a Cd source and an elemental Se source, 1 (ii) conventional MBE, 2 and (iii) by multi-cycle migration enhanced epitaxy deposition of CdSe (with less than 0.5 ML per cycle) in ZnSe matrices with the different growth interruption times after each Cd and Se pulses. 3,7 The structure of most samples used in experiments or of samples grown in similar conditions were characterized by HRTEM. It has been found that the QWs have in growth direction a smooth Gaussianlike profile of the Cd concentration with a halfwidth of 5-7 ML, which does not depend on the nominal thickness of CdSe layers.…”

Section: Introductionmentioning

confidence: 99%

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Optical Spectroscopy of 2d Nanoislands in Quantum Wells: Lateral Island Profiles and Nature of Emitting States

et al. 2007

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Results of experimental studies of photoluminescence (PL) and PL excitation (PLE) spectra of MBE grown single quantum wells (QWs) formed by insertion of few CdSe monolayers in the ZnSe matrix are reviewed. PL spectra of such quantum objects originate from the luminescence of CdSe-rich nanoislands. Two types of island emitting states, namely ground and metastable ones, contribute to the low-and high-energy parts of the PL band, respectively. An interplay between these contributions is responsible for the anomalous temperature dependence of the maximum position of the PL band. The optical orientation and optical alignment experiments at resonant excitations allow to elucidate the nature of the two types of the emitting states. PLE spectra of ground and metastable states have strongly differing characters at excitation below some characteristic energy E ME which is identified as the exciton percolation threshold. A theoretical model of the absorption spectra of emitting island states is presented, and practical applications of the model for the characterization of the island lateral concentration profiles are reported.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optical Spectroscopy of 2d Nanoislands in Quantum Wells: Lateral Island Profiles and Nature of Emitting States

et al. 2007

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“…In this type of structures, the ZnSSe/ZnSe waveguide SL as a whole has an average lattice parameter slightly smaller than that of GaAs to additionally compensate the compressive strain introduced by CdSe QDS. The CdSe/ZnSe QDs were grown both in a standard MBE growth mode and in a migration enhanced epitaxy mode [21].…”

Section: Growth Technologymentioning

confidence: 99%

ZnMgSSe/ZnSe/CdSe quantum dot heterostructures for green laser applications

Yablonskii

Луценко

Vainilovich

et al. 2010

Journal of Non-Crystalline Solids

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“…1 Samples and experimental details We have studied PL and PLE spectra of two systems of single ZnSe/CdSe/ZnSe QWs formed by (i) standard multi-cycle migration enhanced epitaxy of CdSe in ZnSe matrices at the deposition of less than 0.5 CdSe monolayer per cycle grown with different interruption times between each Cd and Se pulses [1] and (ii) by molecular-beam epitaxy with CdS compound as Cd source and an elemental Se source [2]. All samples studied were grown on a (001) oriented GaAs substrate at 280 C. Buffer and cap ZnSe layers were grown in MBE mode and their thickness were about 60-120 nm and 20 nm, respectively.…”

mentioning

confidence: 99%

Exciton states and energy relaxation in ZnCdSe nano‐islands

Reznitsky

Klochikhin

Priller

et al. 2003

phys. stat. sol. (c)

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We suggest a new concept of exciton states in nano-islands based on the study of optical spectra, namely the temperature dependence of cw photoluminescence (PL) and PL excitation (PLE), as well as PL spectra and kinetics under ps pulsed excitation. The scheme of the exciton states in nano-islands is as follows: (I) deep spatially isolated ground states, (II) excited meta-stable states the energy relaxation rate of which strongly depends on the temperature, and (III) the states extending over the whole island size. We show that a redistribution of the population between meta-stable and ground states is responsible for the anomalous temperature shift of the PL band in QWs with islands. Steady-state PL and PLE spectra were excited via a monochromator with a Xe-lamp. PL spectra were excited also by the 2.807 eV and 3.814 eV He-Cd laser lines. For the study of the time-resolved PL a frequency-doubled Ti : sapphire laser at 2.9 eV photon energy with a pulse length of about 150 fs and a repetition rate of 76 MHz was used. The overall time resolution of the detection setup including a synchroscan streak camera was better than 5 ps.In this report we present results for two samples: sample 1 has been prepared by technology (i) and sample 2 -by technology (ii). The nominal thickness of CdSe deposited in ZnSe matrix is about 2 monolayers. As it has been established by transmission electron microscopy the average thickness of the CdSe sheet in these samples is 2.5-3 nm. Both samples have a bimodal distribution of lateral sizes of 2D islands (15-25 nm and less than 10 nm for the sample 1 and about 10 nm and less than 5 nm for the sample 2).

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Peculiarities of migration-enhanced-epitaxy (MEE) versus molecular beam epitaxy (MBE) growth kinetics of CdSe fractional monolayers in ZnSe

Cited by 31 publications

References 8 publications

Optical Spectroscopy of 2d Nanoislands in Quantum Wells: Lateral Island Profiles and Nature of Emitting States

Optical Spectroscopy of 2d Nanoislands in Quantum Wells: Lateral Island Profiles and Nature of Emitting States

ZnMgSSe/ZnSe/CdSe quantum dot heterostructures for green laser applications

Exciton states and energy relaxation in ZnCdSe nano‐islands

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