ZnMgSSe/ZnSe/CdSe quantum dot heterostructures for green laser applications

Yablonskii, G. P.; Луценко, Е. В.; Vainilovich, A. G.; Pavlovskii, V. N.; Ivanov, S. V.; Sedova, I. V.; Sorokin, Sergey; Kop’ev, P. S.

doi:10.1016/j.jnoncrysol.2010.05.038

Cited by 7 publications

(3 citation statements)

References 23 publications

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“…For instance, in the past decades, it has been witnessed that the advance of heterostructure technology results in the much improved device performance and new device functionalities. [ 6–8 ]…”

Section: Figurementioning

confidence: 99%

Halide Perovskite Lateral Heterostructures for Energy Routing Based Photonic Applications

Ren

Wang

et al. 2020

Advanced Optical Materials

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Semiconductor heterostructures hold the promise for developing novel integrated devices with on‐demand photonic and optoelectronic properties. Herein, the perovskite lateral heterostructures in forms of microplates and microwires are fabricated by precise control of two‐step atmospheric pressure chemical vapor deposition course and the unique optical properties are demonstrated for the first time. The comprehensive spectroscopic and elemental mapping characterizations reveal the core‐shell‐like configuration of the individual heterostructure, which features the fascinating energy routing nature. Taking advantage of the effective photon recycling and the energy transfer processes, the record‐low threshold (≈3.5 µJ cm−2) lasing and the indirect pumping induced lasers from the single micro‐heterostructure are demonstrated. Moreover, the distinctive optical waveguides with propagation length independent output spectra from the microwire heterostructure are realized. These findings represent a significant advance in developing novel and functional optoelectronic devices by engineering the perovskite heterostructure.

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Section: Figurementioning

confidence: 99%

Halide Perovskite Lateral Heterostructures for Energy Routing Based Photonic Applications

Ren

Wang

et al. 2020

Advanced Optical Materials

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“…It should be noted that the reflection coefficients of the cavity mirrors in the heterostructures are different because of the different design and significantly differing emission wavelengths. Therefore, we calculated the distribution of the fundamental mode of electromagnetic radiation in the heterostructures A and B for wavelengths of 570 and 590 nm, respectively, in the plane wave approximation . Thus we determined the reflection coefficients of the cavity mirrors at the fundamental mode, the radiation far field patterns and the optical confinement factors.…”

Section: Resultsmentioning

confidence: 99%

“…As the figure shows, the experimental data are well approximated by a linear dependence. Using the relation, in which I thr is expressed in an exponential form

I_{t h r} = \frac{I_{normalT}}{η_{normali}} \exp true(\frac{α_{i} + \frac{1}{L} \ln true(\frac{1}{R} true)}{Γ G_{0}} true),

one can estimate the magnitudes of transparency intensity I T and characteristic gain ΓG 0 for the structures using the experimental values of the threshold excitation intensity for a set of lasers with different L cav . Estimated ΓG 0 exhibited values of 54 and 81 cm −1 , I T was 0.6 and 1.2 kW cm −2 for structures A and B , correspondingly.…”

Section: Resultsmentioning

confidence: 99%

Internal laser characteristics of optically pumped yellow-orange lasers

Alyamani

Луценко²,

Gronin

et al. 2016

Phys. Status Solidi B

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Internal laser characteristics of two heterostructures with an active region based on CdSe quantum dots (QDs) embedded in a complex (2-3) nm ZnCdSe/ZnSe quantum well (QW) were determined by measuring the differential laser efficiency and the laser threshold of a set of samples with different cavity lengths. Due to changing the CdSe QD nominal thickness and the ZnCdSe QW composition, the lasing wavelength for the two structures was tuned over wide ranges: green-yellow (556-573 nm) and yellow-orange (583-593 nm), depending on the cavity length. Maximum optical characteristic gain and internal quantum efficiency were measured as high as ГG 0 ¼ 54 cm À1 , h i ¼ 83% (for green-yellow structure) and ГG 0 ¼ 81 cm À1 , h i ¼ 72% (for yellow-orange one), while the transparency threshold I T was lower for the former structure: 0.6 vs. 1.2 kW cm À2 , with the internal optical loss of a i $ 4.6 cm À1 being equal for both structures. The possible reasons of the high value of the characteristic gain as well as the longwavelength shift of the QDs emission are discussed.

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Epitaxial growth of thin films and quantum structures of II–VI visible-bandgap semiconductors

Hernández‐Calderón

2013

Molecular Beam Epitaxy

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ZnMgSSe/ZnSe/CdSe quantum dot heterostructures for green laser applications

Cited by 7 publications

References 23 publications

Halide Perovskite Lateral Heterostructures for Energy Routing Based Photonic Applications

Halide Perovskite Lateral Heterostructures for Energy Routing Based Photonic Applications

Internal laser characteristics of optically pumped yellow-orange lasers

Epitaxial growth of thin films and quantum structures of II–VI visible-bandgap semiconductors

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