Peculiarities of the 16O(α, α)16O 3.045 Me V resonance scattering and its application to investigation of oxygen in silicon

Soroka, V.I.; Artsimovich, M.V.; Mogilnik, I. F.; Pavlovich, V. N.; Tokarevsky, V.V.; Kudriavtsev, Eugene M.; Romanjuk, B.N.

doi:10.1016/0168-583x(93)95848-y

Cited by 10 publications

(2 citation statements)

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“…A complementary characterization of this layer has been carried out for similar films by scanning in energy below and above the resonance energy of the 16 O͑␣ , ␣͒ 16 O reaction. 30 No oxygen was detected within the films below the surface. The presence of this Cu-O-N surface layer appears to play a relevant role acting as a barrier for N out-diffusion during annealing as further discussed below.…”

Section: A Atomic Compositionmentioning

confidence: 99%

Thermal stability of copper nitride thin films: The role of nitrogen migration

González-Arrabal

Gordillo

Martín‐González³

et al. 2010

Journal of Applied Physics

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The atomic composition, structural, morphological, and optical properties of N-rich copper nitride thin films have been investigated prior to and after annealing them in vacuum at temperatures up to 300°C. Films were characterized by means of ion-beam analysis ͑IBMA͒, X-ray diffraction ͑XRD͒, atomic force microscopy ͑AFM͒, and spectroscopic ellipsometry techniques ͑SE͒. The data reveal that even when the total ͑integrated over the whole thickness͒ atomic composition of the films remains constant, nitrogen starts to migrate from the bulk to the film surface, without out-diffusing, at temperatures as low as 100°C. This migration leads to two chemical phases with different atomic concentration of nitrogen, lattice parameters, and crystallographic orientation but with the same crystal structure. XRD experimental and Rietveld refined data seem to confirm that nitrogen excess accommodates in interstitial locations within the anti-ReO 3 crystal lattice forming a solid solution. The influence of nitrogen migration on the optical ͑electronic͒ properties of the films will be discussed.

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Section: A Atomic Compositionmentioning

confidence: 99%

Thermal stability of copper nitride thin films: The role of nitrogen migration

González-Arrabal

Gordillo

Martín‐González³

et al. 2010

Journal of Applied Physics

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show abstract

“…The resonant elastic scattering (RES) of 16 O(a, a) 16 O at 3.045 MeV has a large scattering cross-section and, therefore, provides a powerful tool to determine the absolute quantity of oxygen non-destructively [7]. Up to now, this RES has been widely used for analyzing oxide thin films [8], in particular high T c superconducting materials [9].…”

Section: Introductionmentioning

confidence: 99%