PECVD Growth of Composition Graded SiGeSn Thin Films as Novel Approach to Limit Tin Segregation

Vanjaria, Jignesh; Arjunan, Arul Chakkaravarthi; Salagaj, T.; Tompa, Gary S.; Yu, Hongbin

doi:10.1149/2162-8777/ab80af

Cited by 6 publications

(3 citation statements)

References 38 publications

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“…To the best of our knowledge, there has yet to be a review article that systematically reported on GeSn material growth and counterpart optoelectronic devices using the CVD technique. UHVCVD [ 101 , 102 , 103 , 104 ], RPCVD [ 105 , 106 , 107 , 108 , 109 , 110 ], PECVD [ 111 , 112 , 113 ], LPCVD [ 114 , 115 , 116 , 117 ], and APCVD [ 118 , 119 ] are discussed in this review, with a focus on identifying processes that can be transferred for the commercial production of GeSn. The objective of this comprehensive review article is to provide readers with a full understanding of the recent experimental advancements in GeSn material growth using CVD, as well as their optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

et al. 2021

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GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable for Si-based, high-efficiency light source applications. For the abovementioned purposes, molecular beam epitaxy (MBE), physical vapour deposition (PVD), and chemical vapor deposition (CVD) technologies have been extensively explored to grow high-quality GeSn alloys. However, CVD is the dominant growth method in the industry, and it is therefore more easily transferred. This review is focused on the recent progress in GeSn CVD growth (including ion implantation, in situ doping technology, and ohmic contacts), GeSn detectors, GeSn lasers, and GeSn transistors. These review results will provide huge advancements for the research and development of high-performance electronic and optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

et al. 2021

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“…PECVD enabled low substrate temperatures and high deposition rates by providing additional energy for precursor bond dissociation through collisions with plasma ions. The effect of temperature and con-centration grading were discussed in prior manuscripts [29] [30]. The focal point of this manuscript is the effect of the substrate type on the SiGeSn film properties.…”

Section: Introductionmentioning

confidence: 99%

Effect of Chamber Conditions and Substrate Type on PECVD of SiGeSn Films

Hariharan¹,

Vanjaria²,

Arjunan³

et al. 2021

CSTA

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In the past studies have shown that the addition of Ge and Sn into Si lattice to form SiGeSn enhances its carrier mobility and band-gap properties. Conventionally SiGeSn epitaxial films are grown using Ultra-High Vacuum (UHV) conditions with pressures ranging from 10 −8 torr to 10 −10 torr which makes high volume manufacturing very expensive. On the contrary, the use of lowpressure CVD processes (vacuum levels of 10 −2 torr to 10 −4 torr) is economically more viable and yields faster deposition of SiGeSn films. This study outlines the use of a cost-effective Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor to study the impact of substrate temperature and substrate type on the growth and properties of polycrystalline SiGeSn films. The onset of polycrystallinity in the films is attributed to the oxygen-rich PECVD chamber conditions explained using the Volmer-Weber (3D island) mechanism. The properties of the films were characterized using varied techniques to understand the impact of the substrate on film composition, thickness, crystallinity, and strain.

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“…due to a high plasma density and a low ion bombardment energy which are conducive to achieving reasonable processing rate and less damage to the substrate. [1][2][3] Some researches [4] have shown that the high driving frequency of capacitively coupled plasma (VHFCCP (30 MHz-300 MHz)) system has some advantages over traditional 13.56-MHz capacitive discharge, which can generate unique gas-phase chemistry and have different processes of excitation, dissociation, and ionization. [5] These sources are beneficial to controlling the morphology of film.…”

Section: Introductionmentioning

confidence: 99%

Discharge characteristic of very high frequency capacitively coupled argon plasma*

Yin¹,

Wang²,

Gao³

et al. 2021

Chinese Phys. B

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The discharge characteristics of capacitively coupled argon plasmas driven by very high frequency discharge are studied. The mean electron temperature and electron density are calculated by using the Ar spectral lines at different values of power (20 W–70 W) and four different frequencies (13.56 MHz, 40.68 MHz, 94.92 MHz, and 100 MHz). The mean electron temperature decreases with the increase of power at a fixed frequency. The mean electron temperature varies non-linearly with frequency increasing at constant power. At 40.68 MHz, the mean electron temperature is the largest. The electron density increases with the increase of power at a fixed frequency. In the cases of driving frequencies of 94.92 MHz and 100 MHz, the obtained electron temperatures are almost the same, so are the electron densities. Particle-in-cell/Monte-Carlo collision (PIC/MCC) method developed within the Vsim 8.0 simulation package is used to simulate the electron density, the potential distribution, and the electron energy probability function (EEPF) under the experimental condition. The sheath width increases with the power increasing. The EEPF of 13.56 MHz and 40.68 MHz are both bi-Maxwellian with a large population of low-energy electrons. The EEPF of 94.92 MHz and 100 MHz are almost the same and both are nearly Maxwellian.

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PECVD Growth of Composition Graded SiGeSn Thin Films as Novel Approach to Limit Tin Segregation

Cited by 6 publications

References 38 publications

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Effect of Chamber Conditions and Substrate Type on PECVD of SiGeSn Films

Discharge characteristic of very high frequency capacitively coupled argon plasma*

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